Magnetoresistance curves obtained experimentally at different temperatures (symbols) and fitted theoretically (lines) for exemplary Ge1− x − y Sn x Mn y Te samples with two different chemical compositions.
The amplitude of the magnetoresistance observed in the studied Ge1− x − y Sn x Mn y Te samples with different chemical compositions. The open symbols represent the spin-glass transition temperatures, as obtained from the magnetometric measurements in Ref. 12 .
Results of the Hall effect measurements for selected Ge1− x − y Sn x Mn y Te samples with different chemical compositions (see legends) showing strong AHE including (a) hysteretic behavior of the isothermal (B) curves and (b) high field Hall effect showing strong AHE.
The Hall resistivity component as a function of the parallel resistivity component obtained experimentally (points) at a few temperatures for selected sample and fitted (lines) to the scaling relation given by Eq. (4) . Different points correspond to different values of magnetic field.
Results of a basic characterization of Ge1− x − y Sn x Mn y Te samples including the chemical composition x and y, the Hall carrier concentration n (measured at T = 300 K), and the spin-glass transition temperature TSG .
Results of the fitting of the experimental Hall effect data to Eqs. (3) and (4) including the low temperature (valid for T < TSG ) estimate of the Hall constant RH , the Hall carrier mobility μ, the anomalous Hall constant RS , and the scaling coefficient nH . The errors were calculated as mean square deviation.
Article metrics loading...
Full text loading...