1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system
Rent:
Rent this article for
USD
10.1063/1.4790321
/content/aip/journal/jap/113/6/10.1063/1.4790321
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790321

Figures

Image of FIG. 1.
FIG. 1.

Magnetoresistance curves obtained experimentally at different temperatures (symbols) and fitted theoretically (lines) for exemplary Ge1− x y Sn x Mn y Te samples with two different chemical compositions.

Image of FIG. 2.
FIG. 2.

The amplitude of the magnetoresistance observed in the studied Ge1− x y Sn x Mn y Te samples with different chemical compositions. The open symbols represent the spin-glass transition temperatures, as obtained from the magnetometric measurements in Ref. 12 .

Image of FIG. 3.
FIG. 3.

Results of the Hall effect measurements for selected Ge1− x y Sn x Mn y Te samples with different chemical compositions (see legends) showing strong AHE including (a) hysteretic behavior of the isothermal (B) curves and (b) high field Hall effect showing strong AHE.

Image of FIG. 4.
FIG. 4.

The Hall resistivity component as a function of the parallel resistivity component obtained experimentally (points) at a few temperatures for selected sample and fitted (lines) to the scaling relation given by Eq. (4) . Different points correspond to different values of magnetic field.

Tables

Generic image for table
Table I.

Results of a basic characterization of Ge1− x y Sn x Mn y Te samples including the chemical composition x and y, the Hall carrier concentration n (measured at T = 300 K), and the spin-glass transition temperature TSG .

Generic image for table
Table II.

Results of the fitting of the experimental Hall effect data to Eqs. (3) and (4) including the low temperature (valid for T < TSG ) estimate of the Hall constant RH , the Hall carrier mobility μ, the anomalous Hall constant RS , and the scaling coefficient nH . The errors were calculated as mean square deviation.

Loading

Article metrics loading...

/content/aip/journal/jap/113/6/10.1063/1.4790321
2013-02-11
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790321
10.1063/1.4790321
SEARCH_EXPAND_ITEM