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Ultrafast switching in wetting properties of TiO2/YSZ/Si(001) epitaxial heterostructures induced by laser irradiation
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10.1063/1.4790327
/content/aip/journal/jap/113/6/10.1063/1.4790327
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790327
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

θ/2θ and φ patterns obtained from the TiO2/YSZ/Si(001) heterostructure.

Image of FIG. 2.
FIG. 2.

Schematic illustration of four equally probable orientations of the rutile film on the YSZ buffer layer.

Image of FIG. 3.
FIG. 3.

(a) Bright field cross section micrograph and the selected area electron diffraction of the TiO2/YSZ/Si(001) heterostructure, showing rutile[031], YSZ[1 0], and Si[1 0] zones. (b) High resolution image of the rutile/YSZ interface. (c) High resolution image of the YSZ/Si(001) interface.

Image of FIG. 4.
FIG. 4.

Matching of integral multiples of crystallographic planes to relax the misfit strain across the rutile/YSZ interface.

Image of FIG. 5.
FIG. 5.

θ/2θ XRD patterns of laser annealed samples that were prepared using several laser energies.

Image of FIG. 6.
FIG. 6.

AFM surface morphology of the laser annealed samples. Data for samples annealed at energies of: (a) 0.16, (b) 0.21, (c) 0.28, and (d) 0.32 J.cm−2 are shown.

Image of FIG. 7.
FIG. 7.

Low magnification bright field TEM image obtained from a sample that was laser annealed with an energy density of 0.32 J.cm−2.

Image of FIG. 8.
FIG. 8.

XPS high resolution O(1 s) core level binding energy for the as-deposited sample. The result of the wettability study is also shown in the inset.

Image of FIG. 9.
FIG. 9.

XPS high resolution O(1 s) core level binding energy for the laser annealed samples. Data for samples annealed at energies of (a) 0.16, (b) 0.21, (c) 0.28, and (d) 0.32 J.cm−2 are shown.

Image of FIG. 10.
FIG. 10.

Results of the wettability studies for the laser annealed samples. Datafor samples annealed at energies of(a) 0.16, (b) 0.21, (c) 0.28, and (d) 0.32 J.cm−2 are shown.

Image of FIG. 11.
FIG. 11.

XPS high resolution O(1 s) core level binding energies for the laser annealed samples after 24 h. Data for samples annealed at energies of (a) 0.16, (b)0.21, (c) 0.28, and (d) 0.32 J.cm−2 are shown.

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/content/aip/journal/jap/113/6/10.1063/1.4790327
2013-02-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast switching in wetting properties of TiO2/YSZ/Si(001) epitaxial heterostructures induced by laser irradiation
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790327
10.1063/1.4790327
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