Band structures of Ge and Sn. The dashed line is the Fermi level.
Compositional dependence of lattice parameters in Ge1−x Sn x alloys. The atoms are represented by spheres: Ge (green, small) and Sn (gray, large).
Compositional dependence of band parameters at various valleys. The empty triangles, squares, and circles correspond to the L-point, Γ-point, and X-point band gaps. The top dashed line represents a linear fit to X valleys. The dotted line traces L valleys. The dashed-dotted line is an exponential fit to Γ valleys.
HOMO and LUMO isosurfaces of Ge1−x Sn x alloys denoted by the shade of blue. The atoms are represented by spheres: Ge (green, small) and Sn (gray, large).
Bonding analyses of various compositions of Ge1−x Sn x alloys shown in Fig. 2 . Each energetically favorable Ge1−x Sn x lattice has sixteen bonds dominated by three main analogues, which are referred to as the Ge-Ge, Ge-Sn, and Sn-Sn bonds.
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