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Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
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10.1063/1.4790424
/content/aip/journal/jap/113/6/10.1063/1.4790424
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790424

Figures

Image of FIG. 1.
FIG. 1.

2 μm × 2 μm AFM images of In x Al1- x N layers with an indium content of 19.7% ± 0.8% grown on FS GaN substrates with an In/Al flux ratio of 3.5, for thicknesses of: (a) 2 nm, (b) 50 nm, (c) 100 nm, (d) 240 nm, and (e) 500 nm. Two V-defects are pointed by white arrows in (b) and (c). One hillock is circled in white in (b). One ring is circled in black in (c). Smaller V-defects surrounding rings are pointed by blue arrows in (d).

Image of FIG. 2.
FIG. 2.

2 μm × 2 μm AFM images of InAlN layers with an indium content of 13.5% grown on FS GaN substrates with an In/Al flux ratio of 3.5, for thicknesses of (a) 100 nm, and (b) 210 nm. In (a), the four V-defects are indicated by white arrows, and one hillock is circled in white.

Image of FIG. 3.
FIG. 3.

2 μm × 2 μm AFM image of a 50 nm thick InAlN layer with an indium content of 19.5% grown on a FS GaN substrate, with an In/Al flux ratio of 1.8.

Image of FIG. 4.
FIG. 4.

Dark-field TEM cross-section images with (a) g = (0002) and (b) g = (11-20) of a 100 nm thick InAlN layer with an indium content of 19.7%, showing two V-defects, pointed by red arrows.

Image of FIG. 5.
FIG. 5.

Z-contrast STEM image of a plan-view 100 nm thick InAlN layer with an indium content of 19.7%.

Image of FIG. 6.
FIG. 6.

Plan-view of a 100 nm thick InAlN layer with an indium content of 19.7%. Z-contrast STEM images of (a) a V-defect different from the one shown in Fig. 5 , (b) three V-defects coalescing, and (c) big V-defects surrounded by smaller V-defects.

Image of FIG. 7.
FIG. 7.

2D schematics of a V-defect displayed in cross-section and plan-view from its nucleation (step 1) to the final step (step 3). For step 3, a close-up view of the TEM image issued from Fig. 4 is shown for comparison.

Image of FIG. 8.
FIG. 8.

Cross-section Z-contrast STEM images of a 500 nm thick InAlN layer with an indium content of 19.7%.

Image of FIG. 9.
FIG. 9.

500 nm thick InAlN layer with an indium content of 19.7%. (a) Cross-section Z-contrast STEM image with (b) the associated EDX map. (c) Plan-view Z-contrast STEM image with (d) the associated EDX map. (e) Plan-view Z-contrast STEM image taken at a lower magnification.

Image of FIG. 10.
FIG. 10.

Schematic cross-sections of coalescing V-defects. For step 4, Z-contrast STEM images of the 500 nm thick InAlN layer with an indium content of 19.7% are shown for the sake of illustration.

Tables

Generic image for table
Table I.

Main characteristics of In x Al1- x N layers, as deduced from AFM measurements, depending on the thickness, the indium composition, and the In/Al flux ratio.

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/content/aip/journal/jap/113/6/10.1063/1.4790424
2013-02-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790424
10.1063/1.4790424
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