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Optimization of Hall bar response to localized magnetic and electric fields
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10.1063/1.4790508
/content/aip/journal/jap/113/6/10.1063/1.4790508
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790508
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schemes of the modeled devices: (a) the reference double-cross device with right corners; (b) the device with sharp slits at the junction corners; and (c) the device with rounded corners at the junction area.

Image of FIG. 2.
FIG. 2.

Measured maps of the transverse voltage V AB of an InAs/GaSb-based device with geometry reported in Fig. 1(a) , width of the current arm w 1 = 1 μm and width of the voltage arm w 2 = 1.5 μm. The maps correspond to the cases of grounded tip, i.e., V tip = 0 V, (a) and V tip = 0.9 V (b), 2.57 V (c), and −2.57 V (d).

Image of FIG. 3.
FIG. 3.

Computed maps of the transverse voltage V AB of an InAs/GaSb-based device with geometry reported in Fig. 1(a) , width of the current arm w 1 = 1 μm and width of the voltage arm w 2 = 1.5 μm. (a) Map of the transverse voltage in the absence of capacitive coupling between the tip and the sample, i.e., assuming only the magnetic effect of the tip. (b)–(f) Maps computed for different values of parameter ψ*: (b) ψ* = −0.012, (c) ψ* = −0.004, (d) ψ* = −0.002, (e) ψ* = 0.001, and (f) ψ* = 0.016.

Image of FIG. 4.
FIG. 4.

Case of reference cross geometry (symmetric cross structure with right corners and arm width w = 1.5 μm). Computed maps of the transverse voltage V AB (a) with and (b) without capacitive coupling between the tip and the sample, i.e., assuming only the magnetic effect of the tip, for I bias = 50 μA.

Image of FIG. 5.
FIG. 5.

Case of symmetric cross structure with right corners. (a) Effect of bias current I bias on the transverse voltage V AB when the tip is over the cross centre and on the peak signals at the corners. Computed transverse voltage for different positions of the scanning tip along the (b) u 1 and (c) u 2 diagonal directions for two values of bias current I bias. The dashed lines are obtained disregarding the electric field contribution.

Image of FIG. 6.
FIG. 6.

Case of symmetric cross structure with right corners. Computed transverse voltage (V AB) for different positions of the scanning tip along theu 1 diagonal direction versus the Hall bar width w. The dashed lines are obtained disregarding the electric field contribution. The inset shows the effect of w on the transverse voltage when the tip is over the cross centre and on the peak signals at the corners.

Image of FIG. 7.
FIG. 7.

Case of asymmetric cross structure with right corners. (a) Computed transverse voltage (V AB) for different positions of the scanning tip along the u 1 diagonal direction versus the width of the voltage arm w 2 (w 1 = 1.5 μm). The dashed lines are obtained disregarding the electric field contribution. The inset shows the effect of w 2 on the transverse voltage when the tip is over the cross centre and on the peak signals at the corners. Computed maps of the transverse voltage (b) with and (c) without capacitive coupling between the tip and the sample, for w 2 = 0.5 μm.

Image of FIG. 8.
FIG. 8.

Case of Hall cross with slits at the corners (Fig. 1(b) ). Computed transverse voltage (V AB) for different positions of the scanning tip along the u 1 diagonal direction versus parameter a (b = 0.5 μm). The dashed lines are obtained disregarding the electric field contribution. The inset shows the effect of a on the transverse voltage when the tip is over the cross centre and on the peak signals at the corners.

Image of FIG. 9.
FIG. 9.

(a) Computed map of the transverse voltage V AB for the Hall cross with slits at the corners when parameter a = 0.5 μm. (b) Computed map of V AB for the Hall cross with rounded corners when parameter r = 1 μm.

Image of FIG. 10.
FIG. 10.

Case of Hall cross with rounded corners (Fig. 1(c) ). Computed transverse voltage (V AB) for different positions of the scanning tip along the u 1 diagonal direction versus parameter r. The dashed lines are obtained disregarding the electric field contribution. The inset shows the effect of r on the transverse voltage when the tip is over the cross centre and on the peak signals at the corners.

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/content/aip/journal/jap/113/6/10.1063/1.4790508
2013-02-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optimization of Hall bar response to localized magnetic and electric fields
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790508
10.1063/1.4790508
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