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Band structure and the optical gain of GaInNAs/GaAs quantum wells modeled within 10-band and 8-band kp model
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10.1063/1.4790568
/content/aip/journal/jap/113/6/10.1063/1.4790568
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790568

Figures

Image of FIG. 1.
FIG. 1.

Sketch of strain-related shifts in conduction and valence band.

Image of FIG. 2.
FIG. 2.

Band structure of unstrained GaNxAs1−x alloys in the vicinity of k  = 0 calculated within 10-band (dashed lines) and 8-band (solid lines) kp model together with the band structure of GaAs host calculated within 8-band model (thin dashed lines) and E and E+ subbands calculated within BAC model (thick black lines).

Image of FIG. 3.
FIG. 3.

Band structure of unstrained Ga1−yInyN0.02As0.98 alloys in the vicinity of k  = 0 calculated within 10-band (dashed lines) and 8-band (solid lines) kp model together with the band structure of Ga1−yInyAs host calculated within 8-band model (thin dashed lines) and E and E+ subbands calculated within BAC model (thick black lines).

Image of FIG. 4.
FIG. 4.

Band structure of unstrained (a) and strained (b) Ga0.65In0.35N0.02As0.98 alloys in the vicinity of k  = 0 calculated within 10-band (dashed lines) and 8-band (solid lines) kp model together with the band structure of Ga1−yInyAs host calculated within 8-band model (dashed lines) and E and E+ subbands calculated within BAC model (thick black lines). The strained case corresponds to situation with the in-plane compressive strain which is present in GaInNAs/GaAs QWs grown on (100) GaAs substrates.

Image of FIG. 5.
FIG. 5.

Band structure of 6 nm wide Ga0.65In0.35NxAs1−x/GaAs QWs with various nitrogen concentration calculated within 10-band (dashed lines) and 8-band (solid lines) kp model.

Image of FIG. 6.
FIG. 6.

Band structure of Ga0.65In0.35N0.02As0.98/GaAs QWs with various widths calculated within 10-band (dashed lines) and 8-band (solid lines) kp model.

Image of FIG. 7.
FIG. 7.

Energy differences between electron subbands at k  = 0 calculated within 10-band and 8-band kp model.

Image of FIG. 8.
FIG. 8.

Optical gain spectra of 6 nm wide Ga0.65In0.35NxAs1−x/GaAs QWs calculated within 10-band (dashed lines) and 8-band (solid lines) kp model for carrier concentration of 5 × 1018 cm−3.

Image of FIG. 9.
FIG. 9.

Optical gain spectra of Ga0.65In0.35NxAs1−x/GaAs QWs for various widths calculated within 10-band (dashed lines) and 8-band (solid lines) kp model for carrier concentration of 5 × 1018 cm−3.

Image of FIG. 10.
FIG. 10.

First electron subband in 6 nm wide Ga0.65In0.35NxAs1−x/GaAs QWs with various nitrogen concentrations calculated within 10-band (dashed lines) and 8-band (solid lines) kp model and plotted in the shifted energy scale for comparison. Horizontal dashed and solid lines correspond to the Fermi level position for the carrier concentration of 5 × 1018 cm−3 obtained within 10-band and 8-band kp model, respectively.

Image of FIG. 11.
FIG. 11.

Optical gain spectra of 6 nm width Ga0.65In0.35N0.02As0.98/GaAs QWs calculated within 10-band (dashed lines) and 8-band (solid lines) kp model for various carrier concentrations.

Tables

Generic image for table
Table I.

Material parameters of binary compounds taken after Ref. 25 .

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/content/aip/journal/jap/113/6/10.1063/1.4790568
2013-02-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band structure and the optical gain of GaInNAs/GaAs quantum wells modeled within 10-band and 8-band kp model
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790568
10.1063/1.4790568
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