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Effect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots
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10.1063/1.4790593
/content/aip/journal/jap/113/6/10.1063/1.4790593
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790593

Figures

Image of FIG. 1.
FIG. 1.

(a) FESEM image and (b) size distribution of self assembled Ge islands grown on Si (100) at 500 °C (sample “GS1: 500, no annealing”). Inset of (a) shows the HRTEM image of one of the typical Ge islands.

Image of FIG. 2.
FIG. 2.

(a) FESEM image and (b) size distribution of self assembled Ge islands grown on Si (100) at 550 °C (sample “GS2: 550, no annealing”).

Image of FIG. 3.
FIG. 3.

(a) FESEM and (b) TEM images of self assembled Ge islands grown on Si (100) at 600 °C (sample “GS3: 600, no annealing”).

Image of FIG. 4.
FIG. 4.

Raman spectra of the samples for 7.5 ML Ge coverage at substrate temperature of 500 °C (sample “GS1: 500, no annealing”), 550 °C (sample “GS2: 550, no annealing”), 600 °C (sample “GS3: 600, no annealing”), and reference Si substrate.

Image of FIG. 5.
FIG. 5.

Photoluminescence spectra recorded at 10 K from Ge islands grown at different temperatures. Inset shows the schematic band alignment in the heterostructure with Ge/Si islands; the position of the Δ(2) electron valleys and the heavy hole bands are shown. PL for reference Si substrate is also shown.

Image of FIG. 6.
FIG. 6.

Temperature dependent integrated PL intensity of Ge islands grown at different temperatures.

Image of FIG. 7.
FIG. 7.

FESEM micrographs of Ge islands with 10 ML coverage under different post-growth annealing conditions (a) as deposited at 500 °C, (b) 550 °C for 10 min, (c) 600 °C for 10 min, and (d) 600 °C for 30 min of annealing.

Image of FIG. 8.
FIG. 8.

PL spectra of Ge islands obtained from (a) as deposited, 10 ML thick Ge grown at 500 °C, and after subsequent ex-situ annealing at (b) 550 °C for 10 min, (c) 600 °C for 10 min, and (d) 600 °C for 30 min at 10 K. PL for reference Si substrate is also shown.

Image of FIG. 9.
FIG. 9.

Current density through the devices as a function of gate voltage for (a) 7.5 ML Ge coverage grown at 600 °C (“GS3: 600, no annealing”) and (b) 10 ML Ge coverage grown at 500 °C (“GS4: 500, no annealing”). The device is forward biased with –ve voltage applied at the metal gate with p-Si substrate being grounded.

Image of FIG. 10.
FIG. 10.

Voltage dependent electroluminescence spectra of Ge nanoislands for the devices with (a) 7.5 ML Ge coverage grown at 600 °C (“GS3: 600, no annealing”) and (b) 10 ML Ge coverage grown at 500 °C (“GS4: 500, no annealing”) at 10 K.

Image of FIG. 11.
FIG. 11.

Energy band diagram of the MOS LED structure containing Ge islands at the accumulation bias.

Image of FIG. 12.
FIG. 12.

Integrated electroluminescence intensity as a function of current density for the devices with (a) 7.5 ML Ge coverage grown at 600 °C (“GS3: 600, no annealing”) and (b) 10 ML Ge coverage grown at 500 °C (“GS4: 500, no annealing”).

Tables

Generic image for table
Table I.

Detailed parameters of the MBE grown samples reported in the study.

Generic image for table
Table II.

Raman spectra analysis of grown islands.

Generic image for table
Table III.

Size distribution and photoluminescence peak position of Ge islands grown by MBE.

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/content/aip/journal/jap/113/6/10.1063/1.4790593
2013-02-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790593
10.1063/1.4790593
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