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Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
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10.1063/1.4790636
/content/aip/journal/jap/113/6/10.1063/1.4790636
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790636
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Representative SEM image of a p-n junction for a typical m-plane InGaN/GaN LED.

Image of FIG. 2.
FIG. 2.

Representative optical micrographs of the unprocessed n-GaN films and full LED structures. Angles indicate the substrate misorientation toward the c direction.

Image of FIG. 3.
FIG. 3.

Representative optical micrograph of the nominally on-axis LED sample after fabrication of the metal grids and trenches.

Image of FIG. 4.
FIG. 4.

(a) SEM image of the shallowest measured junction for the nominally on-axis LED sample. (b) SEM image of the deepest measured junction for the nominally on-axis LED sample.

Image of FIG. 5.
FIG. 5.

(a) SEM image of the shallowest measured junction for the intentionally misoriented LED sample. (b) SEM image of the deepest measured junction for the intentionally misoriented LED sample.

Image of FIG. 6.
FIG. 6.

(a) Variation in junction depth and etch depth along the c-axis for the nominally on-axis LED sample. (b) Variation in junction depth and etch depth along the c-axis for the intentionally misoriented LED sample.

Image of FIG. 7.
FIG. 7.

(a) Optical micrograph of an area on the nominally on-axis LED sample. The red arrow shows the position and direction on the wafer from which the corresponding SEM image was recorded. (b) SEM image showing the variation in junction depth at the position indicated on the optical micrograph.

Image of FIG. 8.
FIG. 8.

Optical micrograph showing the pyramidal hillock and indicating the location of positions A–F.

Image of FIG. 9.
FIG. 9.

(a) SEM image showing the junction depth at position A. (b) SEM image showing the junction depth at position B. (c) SEM image showing the junction depth at position C. (d) SEM image showing the junction depth at position D. (e) SEM image showing the junction depth at position E. (f) SEM image showing the junction depth at position F.

Image of FIG. 10.
FIG. 10.

(a) Optical micrograph showing the pyramidal hillock and indicating the location of positions A–F (reproduced from Fig. 8 for clarity). (b) Variation in junction depth and etch depth along the c-axis of the pyramidal hillock. (c) Cross-sectional schematic illustrating the morphological evolution of a pyramidal hillock during the course of a typical LED growth on a nominally on-axis m-plane substrate.

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/content/aip/journal/jap/113/6/10.1063/1.4790636
2013-02-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790636
10.1063/1.4790636
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