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Ordered arrays of Si and Ge nanocrystals via dewetting of pre-patterned thin films
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10.1063/1.4790713
/content/aip/journal/jap/113/6/10.1063/1.4790713
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790713
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Representation of the three dewetting regimes: (a) nucleation of holes (AFM image after 30 min annealing); (b) film retraction (SEM image of the surface after 1 h annealing); (c) coalescence of dewetted areas (optical microscopy image of the surface after 9 h annealing). The flat light rounded areas represent the center of each dewetted area; (d) higher magnification SEM image of a faceted NC where {100} and {110} facets are well visible. Arrows indicate the [110] crystallographic directions; (e) SEM image of a larger dewetted area which shows the random position of NCs.

Image of FIG. 2.
FIG. 2.

Evolution of the NCs size with the nominal Ge thin film thickness (h0). Ge thin film was deposited on tunnel SiO2 layer (hSiO2 = 5 nm) itself thermally grown on Si(001) substrate. h0 was varied between: (a) h0 = 0.5 nm; (b) h0 = 2 nm; (c) h0 = 3 nm; (d) h0 = 7 nm. TEM cross-section images are presented at the same magnification. The structures observed from bottom to top consist of: Si(001) substrate/SiO2/Ge NCs.

Image of FIG. 3.
FIG. 3.

Evolution of the NCs density and mean diameter as a function of the nominal thin film thickness for: (a)-(b) SOI and (c)-(d) amorphous Ge. The graph (e) gives the comparative evolution of Ge and Si NCs mean size as a function of h0.

Image of FIG. 4.
FIG. 4.

AFM images of EBL patterns made on SOI substrate (Si top layer thickness hSi = 11 nm). Periodic lines and holes are patterned along (a) and (c) [100] and (b) and (d) [110]. The upper part of the figure corresponds to λ = 200 nm period and the lower part to λ = 500 nm.

Image of FIG. 5.
FIG. 5.

Evolution of the NCs mean diameter (Φ) with the periodicity of the patterns (λ).

Image of FIG. 6.
FIG. 6.

Ordering of Si NCs on SOI substrate nanopatterned with lines that have been presented in Fig. 4. Lines are those presented on Figure 3 . The distance between the lines vary between: (a) and (d) λ = 200 nm; (b) and (e) λ = 500 nm; (c) and (f) λ = 1 μm. The lines orientation follows [100] on the upper part (a-b-c) and [110] on the bottom part (d-e-f).

Image of FIG. 7.
FIG. 7.

AFM images of Si NCs ordered SOI substrates nanopatterned with holes on nanopatterned SOI substrates for (a) and (b) λ = 500 nm and (c) λ = 150 nm. The patterns are oriented along [100] in (a) and (c) and along [110] in (b). The inset of (c) is a line profile roughness measurement which evidences a NCs mean size of ∼100 nm. In (c), the patterns are produced by LMAIS-FIB.

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/content/aip/journal/jap/113/6/10.1063/1.4790713
2013-02-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ordered arrays of Si and Ge nanocrystals via dewetting of pre-patterned thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790713
10.1063/1.4790713
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