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Mid-infrared absorptance of silicon hyperdoped with chalcogen via fs-laser irradiation
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10.1063/1.4790808
/content/aip/journal/jap/113/6/10.1063/1.4790808
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790808

Figures

Image of FIG. 1.
FIG. 1.

Absorptance of chalcogen-hyperdoped silicon. Data for a control sample (Si:N2) and the silicon substrate (c-Si) are also plotted for comparison. Data from 0.09 to 0.62 eV was collected using an FTIR spectrometer and data from 0.5 to 1.5 eV was collected using a UV-VIS-NIR spectrophotometer. The mismatch between the data from two instruments at 0.5 eV is about 3%.

Image of FIG. 2.
FIG. 2.

Scanning electron micrographs of fs-laser hyperdoped silicon. The images are taken at a 45° angle to the surface. Si:S-1, Si:Se, Si:Te, and Si:N2 are irradiated with the same fs-laser parameter: 4 kJ/m2, 80 pulses. Si:S-2 is irradiated with 8 kJ/m2, 50 pulses. After annealing, we examined all samples under SEM and observed no change in surface morphology in any of the samples.

Image of FIG. 3.
FIG. 3.

(a) Illustration of light propagation though micrometer-scale structures with spacing w and height h, as well as the corresponding reflectance and transmittance as a function of photon energy (proportional to inverse wavelength). Three wavelength ranges represent different light and matter interactions: optically smooth (left), graded density (middle), and multiple reflections (right). The representative wavelengths are shown for the incoming light (gray); for each wavelength, three arrows indicate incoming, reflected, and transmitted light. (b) Reflectance and transmittance spectra of Si:Se (brown) and Si:Te (green) between 0.09 and 0.2 eV. The vertical dashed lines at 0.11 eV (11.3 μm) and 0.16 eV (7.6 μm) correspond to transition wavelengths at 2.5h and 2w, respectively.

Image of FIG. 4.
FIG. 4.

Mid-infrared absorptance of Si:S-2, Si:Se, and Si:Te before (black) and after annealing at 730 K (blue) and 990 K (red). Except for the gray line, all Si:S-2 data are taken after a 5% HF etch for 1 min and the surface oxide absorption band from 0.13 to 0.15 eV is removed. Labels correspond to absorption features phonon vibrations and other contaminants: hydroxide (OH; centered at 0.42 eV), 44 hydrocarbon (CH; three peaks near 0.36 eV), 44 silicon phonons (below 0.13 eV and between 0.16–0.18 eV), 45 and CO2 molecules in the spectrometer (0.29 eV). 46 The curves are fits of the free carrier absorption model in Eq. (2) :

Tables

Generic image for table
Table I.

Average surface feature spacing w and height h.

Generic image for table
Table II.

Hall-effect and resistivity measurements of Se- and Te-hyperdoped Si after annealing.

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/content/aip/journal/jap/113/6/10.1063/1.4790808
2013-02-14
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mid-infrared absorptance of silicon hyperdoped with chalcogen via fs-laser irradiation
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790808
10.1063/1.4790808
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