(a) High resolution cross sectional TEM analysis showing the 4.5 nm Si nanocrystals formed in the Si/SiO2 multilayer after annealing at 1150 °C 1h, (b)-(c) grain size distribution from plan view TEM images of 15, 25 and 60s deposition and average size of nanocrystals as a function of the deposition time.
(a) Raman spectrum (continuous line) obtained in Sample M (4.5 nm) compared with the bulk Si (dashed line) scaled by a factor 5; (b) comparison of the modelled Raman profile according to the explanation in the text with the experimental profile subtracted of the a-Si component around 480 cm−1.
PL spectra of Samples M (4.5 nm) and Sample L (3 nm).
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