Upper: schematic illustration of pentacene OFET. Lower: band structure where the DOS N(E) is Gaussian distributed with a deviation of ΔE and the band conductivity σ′(E) has a smaller deviation of αΔE.
Plots of the approximation to the carrier concentration (a) and the band conductivity (b), respectively. The utilized constants for (a) are: kn = 1.46 (ΔE = 0.2 eV), kn = 1.49 (ΔE = 0.15 eV), kn = 1.65 (ΔE = 0.1 eV). The utilized constants for (b) are: kn = 1.49, kσ = 1.05 (α = 1); kn = 1.49, kσ = 1.10 (α = 0.8); kn = 1.49, kσ = 1.24 (α = 0.6).
Power dissipated in the studied OFET at various gate voltages. In the upper figure “source” and “drain” indicate the access OSC bulk, not the contact electrodes. As nearly zero power is dissipated in the gate insulator so that it is not shown in other figures.
Effects of the energetic disorder on the contact (a) and channel (b) resistances, respectively. The utilized constants are given in Fig. 2 except for kσ = 1.04 (ΔE = 0.2 eV), kσ = 1.10 (ΔE = 0.15 eV), kσ = 1.31 (ΔE = 0.1 eV). (c) and (d) show the effects of different transport mechanism, i.e., at various band-like/hopping transport hybridization levels.
Dissipated power at two different gate voltages with various levels of energetic disorder, for Figures 4(a) and 4(b) .
Dissipated power at two different gate voltages with various levels of band-like/hopping transport hybridization, for Figures 4(c) and 4(d) .
Effects of the mobility anisotropy on the contact (a) and channel (b) resistances, respectively. We consider a high-quality organic semiconductor film and thus the disorder level is low and the hopping contribution to the overall transport is slight. The constants utilized for approximations are kn = 1.67 and kσ = 1.24.
Dissipated power at two different gate voltages with various levels of mobility anisotropy, for Figure 7 .
Parameters for the analyzed pentacene OFET.
Article metrics loading...
Full text loading...