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Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors
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10.1063/1.4792229
/content/aip/journal/jap/113/6/10.1063/1.4792229
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4792229

Figures

Image of FIG. 1.
FIG. 1.

The atomic structures for the (a) , (b) , and (c) defects in neutral charge state. In (b), corresponds to the defect in Table I , which has the In neighbors.

Image of FIG. 2.
FIG. 2.

The projected densities of states (PDOS) onto the neighboring In and O atoms for the (a) , (b) , and (c) defects in neutral charge state, which correspond to Figs. 1(a)–1(c) , respectively. The VBM of a-IGZO is set to zero and denotes the Fermi level.

Image of FIG. 3.
FIG. 3.

(a) The variation of energy during the dissociation process, , for the , and defects. (b) The atomic structures of the initial, saddle-point, and final configurations in the dissociation process of the defect.

Image of FIG. 4.
FIG. 4.

Two migration processes of an interstitial around a defect. In (a), migrates via the hopping process, whereas the diffusion occurs via the reorientation of the O–H bond in (b).

Image of FIG. 5.
FIG. 5.

Two diffusion procedures of a substitutional via the concerted exchange process. In (a), exchanges with a nearby O atom around the same metal atom which is bonded to . In (b), the diffusion process occurs via an O atom around the nearby metal atom, which is close but not directly bonded to the initial .

Image of FIG. 6.
FIG. 6.

The concentration is plotted as a function of annealing time at different temperatures.

Tables

Generic image for table
Table I.

The relative energies (E) of three defects in the 1+ charge state. The numbers of In, Ga, and Zn atoms around the defect are denoted by , and , respectively.

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/content/aip/journal/jap/113/6/10.1063/1.4792229
2013-02-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4792229
10.1063/1.4792229
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