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Luminescence and energy transfer processes in ensembles and single Mn or Tb doped ZnS nanowires
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10.1063/1.4790173
/content/aip/journal/jap/113/7/10.1063/1.4790173
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4790173

Figures

Image of FIG. 1.
FIG. 1.

(a) Scanning electron microscopy (SEM) picture of the ZnS nanowires. (b) Monochromatic cathodoluminescence image acquired at 546 nm (5 nm bandpass) showing the uniform intra 4f-emission of the Tb implanted ZnS (xTb = 4 × 10−3) nanowires.

Image of FIG. 2.
FIG. 2.

EDX spectra of Tb implanted ZnS nanowires after annealing at 600 °C. The determined Tb content is xTb = 4 ± 2 × 10−2.

Image of FIG. 3.
FIG. 3.

Spectrum of the integrated photoluminescence of ZnS nanowires doped with xMn = 3.2 × 10−4 (a) and xTb = 4 × 10−3 (b) respectively measured at 10 K with an excitation at 355 nm. The inset in (b) shows the integrated photoluminescence intensity around 550 nm for different Tb concentrations.

Image of FIG. 4.
FIG. 4.

Transients of ZnS nanowires doped with different concentrations of Mn (a) and of Tb (b) measured at 10 K. Solid lines represent the fit with the modified Förster model using Eq. (1) .

Image of FIG. 5.
FIG. 5.

Transients of the ZnS:Mn nanowires with a concentration of xMn = 4 × 10−5 taken at 10 K for different excitation densities. The solid lines are the corresponding fit curves of the modified Förster model with a decreasing “killer” center line density n for higher excitation densities. Other parameters were kept constant for all curves: R 0 = 4.85 nm, τMn  = τMigr  = 2 ms and d = 1.

Image of FIG. 6.
FIG. 6.

Transients of the ZnS:Mn wires with a concentration of xMn = 4 × 10−5 taken at different temperatures with an excitation density of 4.6 mJ/cm2. The solid lines were fitted with the modified Förster model using a larger R 0 for higher temperatures. The other parameters were fixed for all curves: τMn  = τMigr = 2 ms, n = 0.195 cm−1 and d = 1.

Image of FIG. 7.
FIG. 7.

Images of Tb doped ZnS nanowires with a concentration of xTb = 4 × 10−3. (a) Picture of a micro-ensemble of wires taken with a TV CCD in reflection geometry. (b) Image of a single nanowire taken with the ICCD in the zero order of the spectrograph.

Image of FIG. 8.
FIG. 8.

Transients of the Tb luminescence of a macroscopic ensemble (black squares), microscopic ensemble (red dots) and a single ZnS nanowire (green triangles) with a Tb concentration of xTb = 4 × 10−3 measured at room temperature. The solid line is a guide to the eyes only.

Tables

Generic image for table
Table I.

Fitting parameters used for the modified Förster model in Eq. (1) for doped ZnS nanowires with different concentrations. The other parameters have been kept constant: τMn/Tb  = 2 ms; n = 0.26 nm−1.

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/content/aip/journal/jap/113/7/10.1063/1.4790173
2013-02-15
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Luminescence and energy transfer processes in ensembles and single Mn or Tb doped ZnS nanowires
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4790173
10.1063/1.4790173
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