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Comparison of light scattering in solar cells modeled by rigorous and scalar approach
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10.1063/1.4790360
/content/aip/journal/jap/113/7/10.1063/1.4790360
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4790360
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Topographies of small feature sample (a) with heights up to 600 nm, stretched sample (b, heights of up to 3100 nm), and large feature air and μc-Si:H sample (c) (heights up to 890 nm) as measured by AFM. Panel (d)shows the surface of the LPCVD-grown ZnO:B layer (heights up to 540 nm).

Image of FIG. 2.
FIG. 2.

Sketch of the system used in FDTD simulations. The dashed and dotted lines show the planes used for calculation of the AID (dashed: PM, dotted: FDTD) and light scattered into evanescent modes (dashed line).

Image of FIG. 3.
FIG. 3.

Topography, PM and FDTD results for large feature air sample: Original topography (a), real part of the pupil function as obtained by PM (b), real part of the electric field in polarization direction obtained by FDTD above the highest peak of the topography (c), and 3.5 μm above the surface (d). All calculations were performed at a wavelength of 600 nm.

Image of FIG. 4.
FIG. 4.

Spectral haze of the small feature (a) and large feature air (b) sample calculated from PM and FDTD for a ZnO:Al/air interface.

Image of FIG. 5.
FIG. 5.

Spectral haze of the large feature μc-Si:H (a) and stretched (b)sample.

Image of FIG. 6.
FIG. 6.

Spectral haze of the LPCVD sample.

Image of FIG. 7.
FIG. 7.

Angular intensity distribution of 30s (small feature sample, a) and 50s (large feature air sample, b) etched ZnO:Al at a ZnO:Al/air interface, calculated using PM and FDTD. AID is shown for 600 nm and 1000 nm. All curves are normalized to their respective maxima.

Image of FIG. 8.
FIG. 8.

Angular intensity distribution at a ZnO:Al/μc-Si:H interface (large feature μc-Si:H sample, a) and a numerically stretched sample at a ZnO:Al/air interface (stretched sample, b). AID is shown for 600 nm and 1000 nm. Both curves are normalized to their respective maxima.

Image of FIG. 9.
FIG. 9.

Angular intensity distribution at a ZnO:Al/air interface for the LPCVD sample. The curves at wavelengths of 600 nm and 1000 nm are normalized to the values at and , respectively, with the PM showing a stronger peak at .

Image of FIG. 10.
FIG. 10.

Light scattered into evanescent modes for ZnO:Al/air interfaces of the small feature sample (a) and large feature air sample (b). The dashed and dotted vertical lines represent the beginning of the evanescent modes for 1000 nm and 600 nm, respectively.

Image of FIG. 11.
FIG. 11.

Light intensity scattered into evanescent modes for the large feature μc-Si:H sample (ZnO:Al/μc-Si:H interface, a) and stretched sample (b). The dashed and dotted vertical lines represent the beginning of the evanescent modes for 1000 nm and 600 nm, respectively.

Image of FIG. 12.
FIG. 12.

Light intensity scattered into evanescent modes for LPCVD sample. The dashed and dotted vertical lines represent the beginning of the evanescent modes for 1000 nm and 600 nm, respectively.

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/content/aip/journal/jap/113/7/10.1063/1.4790360
2013-02-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of light scattering in solar cells modeled by rigorous and scalar approach
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4790360
10.1063/1.4790360
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