Temperature dependence of dielectric constant for PIN-PT ceramics measured at 1 kHz, 10 kHz, 100 kHz, and 1 MHz. (a) PIN and (b) 0.85PIN-0.15PT.
Temperature dependence of dielectric constant for (1–x) PIN-xPT ceramics measured at 1 kHz for 0.25 ≤ x ≤ 0.41. Inset shows the variation of γ with PT content.
Temperature dependence of dielectric constant for (1–x) PIN-xPT (x = 0.60 and 0.80) ceramics measured at 1 kHz.
Concentration evolution of dielectric relaxation.
Variation of TB-Tm with different PT content.
(a) Room temperature Raman spectra of PIN-PT ceramics with various Ti4+ concentration. Arrow indicates the new mode at 750 cm−1. (b) Representative deconvolution of the pure PIN spectrum. Inset shows the deconvolution of A1g mode for x = 0.15.
Evolution of (a) frequency and (b) FWHM of selected bands in the lower wave number region (100–400 cm−1).
(a) Composition dependence of the FWHM of Raman modes near 800 cm−1. (b) PT dependence of the relative intensity of L (800 cm−1) band.
Parameters derived from dielectric measurement for PIN-PT system.
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