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Temperature dependent surface photovoltage spectra of type I GaAs1−xSbx/GaAs multiple quantum well structures
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10.1063/1.4792065
/content/aip/journal/jap/113/7/10.1063/1.4792065
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792065

Figures

Image of FIG. 1.
FIG. 1.

The SPS spectra for GaAs1−xSbx/GaAs MQW structures for different antimony content measured between 15 K and 300 K.

Image of FIG. 2.
FIG. 2.

The schematic band diagram shows the band alignment and corresponding energy transitions of GaAs1−xSbx/GaAs MQW.

Image of FIG. 3.
FIG. 3.

DSPS for GaAs0.74Sb0.26/GaAs MQW structure for a few temperatures. Arrows indicate the optical transition energies for the main features present in the spectra.

Image of FIG. 4.
FIG. 4.

The temperature dependencies of 1hh-1e optical transition energies for all investigated structures—points, and fit with Bose-Einstein expression to experimental data—solid lines.

Tables

Generic image for table
Table I.

The Bose–Einstein–type fitting parameters which describe the temperature dependence of 1hh-1e transition energies for GaAs1−xSbx/GaAs MQW structures.

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/content/aip/journal/jap/113/7/10.1063/1.4792065
2013-02-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependent surface photovoltage spectra of type I GaAs1−xSbx/GaAs multiple quantum well structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792065
10.1063/1.4792065
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