The SPS spectra for GaAs1−xSbx/GaAs MQW structures for different antimony content measured between 15 K and 300 K.
The schematic band diagram shows the band alignment and corresponding energy transitions of GaAs1−xSbx/GaAs MQW.
DSPS for GaAs0.74Sb0.26/GaAs MQW structure for a few temperatures. Arrows indicate the optical transition energies for the main features present in the spectra.
The temperature dependencies of 1hh-1e optical transition energies for all investigated structures—points, and fit with Bose-Einstein expression to experimental data—solid lines.
The Bose–Einstein–type fitting parameters which describe the temperature dependence of 1hh-1e transition energies for GaAs1−xSbx/GaAs MQW structures.
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