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Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor
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10.1063/1.4792477
/content/aip/journal/jap/113/7/10.1063/1.4792477
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792477
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) 3D schematic of a FinFET wrapped around by a GST liner stressor. Coordinate axes are also shown. When GST crystallizes, its volume is reduced by ∼6%. (b) 2D schematics of the fin cross-section in the A-A′ and B-B′ planes illustrate the large compressive ⟨110⟩ strain in the fins and in the channel region under the metal gate, respectively, that can result from contraction of the GST. A cross-sectional SEM image in the A-A′ plane and a TEM image in the B-B′ plane are also shown.

Image of FIG. 2.
FIG. 2.

(a) A TEM image showing a cross-sectional view of the Si fin structures with different Wfin wrapped around by c-GST stressor. A series of points (labeled 1–10) far from the strained Si fins are selected to generate (b) diffraction patterns as reference. Silicon is expected to be unstrained at the positions of points 1–10. (c) Strain values at the reference points show a standard deviation of 0.05% in the ⟨110⟩ direction and 0.1% in the ⟨001⟩ direction.

Image of FIG. 3.
FIG. 3.

3D numerical simulation of a FinFET (Wfin  = 130 nm) with GST liner stressor. (a) and (b) The distributions of the horizontal stress (σxx ) and vertical stress (σzz ), respectively, on the x-z plane along the center of the gate. (c) and (d) The zoomed-in view of the fin area for σxx and σzz , respectively.

Image of FIG. 4.
FIG. 4.

(a) TEM image of Si fin A (Wfin  = 130 nm) with 66-nm-thick c-GST stressor. Five points A 1-A 5 were selected for NBD strain measurements. The measured and simulated strain values in fin A in the (b) horizontal ⟨110⟩ and (c) vertical ⟨001⟩ directions are plotted.

Image of FIG. 5.
FIG. 5.

(a) TEM image of Si fin B (Wfin  = 90 nm) with 66-nm-thick c-GST stressor. Eight points B 1-B 8 were selected for NBD strain measurements. (b) Measured and simulated strain values in fin B in the horizontal ⟨110⟩ direction. (c) Measured and simulated strain values at points B 5-B 8 in the vertical ⟨001⟩ direction.

Image of FIG. 6.
FIG. 6.

2D numerical simulation results showing the different horizontal stress σxx distributions in Si fins (Wfin  = 90 nm) wrapped around by 60-nm-thick GST liner stressor with different fin and GST profiles. (a) and (c) have a vertical fin profile while (b) and (d) have a fin profile that is slanted on the left side. (a) and (b) have a symmetric GST profile, while (c) and (d) have an asymmetric GST profile (i.e., the GST recess on the left of the fin is deeper and sharper as compared to that on the right of the fin). Uneven GST profile on the fins [as observed in Fig. 5(a) ] has been considered in the simulation.

Image of FIG. 7.
FIG. 7.

(a) TEM image of Si fin A′ (Wfin  = 130 nm) covered by metal gate, and with 66-nm-thick c-GST stressor. Ten points A′ 1-A′ 10 were selected for NBD strain measurements. The measured and simulated strain values in fin A′ in the (b) horizontal ⟨110⟩ and (c) vertical ⟨001⟩ directions are plotted.

Image of FIG. 8.
FIG. 8.

(a) TEM image of Si fin B′ (Wfin  = 90 nm) covered by metal gate, and with 66-nm-thick c-GST stressor. Six points B′ 1-B′ 6 were selected for NBD strain measurements. The measured and simulated strain values in fin B′ in the (b) horizontal ⟨110⟩ and (c) vertical ⟨001⟩ directions are plotted.

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/content/aip/journal/jap/113/7/10.1063/1.4792477
2013-02-20
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792477
10.1063/1.4792477
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