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Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor
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10.1063/1.4792477
/content/aip/journal/jap/113/7/10.1063/1.4792477
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792477
/content/aip/journal/jap/113/7/10.1063/1.4792477
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/content/aip/journal/jap/113/7/10.1063/1.4792477
2013-02-20
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792477
10.1063/1.4792477
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