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Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals
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10.1063/1.4792499
/content/aip/journal/jap/113/7/10.1063/1.4792499
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792499
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy dispersive spectroscopic analysis of TGISS crystal.

Image of FIG. 2.
FIG. 2.

The X-ray diffraction pattern for TGISS crystal.

Image of FIG. 3.
FIG. 3.

Temperature dependence of PL spectra from TGISS crystal at exciting laser intensity L = 55.7 mW cm−2. Note that for curves 10–16, the intensities have been multiplied by a factor of thirty.

Image of FIG. 4.
FIG. 4.

Temperature dependence of PL band intensity for TGISS crystal at excitation laser intensity L = 55.7 mW cm−2. Circles are the experimental data. Solid curve shows the theoretical fit using Eq. (1) . Inset: Temperature dependence of the emission band peak energy.

Image of FIG. 5.
FIG. 5.

PL spectra of TGISS crystal as a function of exciting laser intensity at T = 17 K. Note that for curves 1–11, the intensities have been multiplied by a factor of eight.

Image of FIG. 6.
FIG. 6.

Excitation laser intensity versus emission band peak energy at T = 17 K for TGISS crystal. The solid curve represents the theoretical fit using Eq. (2) . Inset: Dependence of PL peak intensity on the exciting laser intensity at T = 17 K. The solid line shows the theoretical fit using Eq. (3) .

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/content/aip/journal/jap/113/7/10.1063/1.4792499
2013-02-15
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792499
10.1063/1.4792499
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