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Strain induced intermixing of Ge atoms in Si epitaxial layer on Ge(111)
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View: Figures


Image of FIG. 1.
FIG. 1.

Dispersion of the S' 1 state of the √3 structure on (a) the Si(111) surface, (b) θ S = 1.0 BL, (c) θ S = 2.0 BL, and (d) θ S = 3.0 BL of the strained Si/Ge(111). Values of k F and m* are (a) 1.090 ± 0.005 Å−1, 0.21 ± 0.02 m e, (b) 1.071 ± 0.005 Å−1, 0.28 ± 0.02 m e, (c) 1.066 ± 0.005 Å−1, 0.20 ± 0.02 m e, and (d) 1.059 ± 0.005 Å−1, 0.22 ± 0.02 m e, respectively, where m e is the free electron mass. Filled squares show the peak positions of the S' 1 state estimated from peak fitting of the ARPES curves.

Image of FIG. 2.
FIG. 2.

Relationship between mean atomic spacing and Si thickness, θ S. The dotted line indicates the atomic spacing of the √3 × √3-Ag structure on Si(111).

Image of FIG. 3.
FIG. 3.

Relationship between strain and m* for the surface metallic band in the √3 × √3-Ag structure on Si/Ge(111).

Image of FIG. 4.
FIG. 4.

Ge-3d core level photoelectron spectra from the surface of the Si film on Ge(111), at (a) θ S = 0 BL, (b) θ S = 1.5 BL, (c) θ S = 2.5 BL, and (d) θ S = 5.0 BL. Spectral contributions are resolved using four different spin-orbit doublets, and are components of bulk (B) and surface atoms bound to adatoms (S 1), rest atom (S 2), and adatom (S 3).

Image of FIG. 5.
FIG. 5.

Dependence of surface component thickness in Ge-3d states (open squares) and Si-2p states (solid circles).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain induced intermixing of Ge atoms in Si epitaxial layer on Ge(111)