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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
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10.1063/1.4792505
/content/aip/journal/jap/113/7/10.1063/1.4792505
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792505

Figures

Image of FIG. 1.
FIG. 1.

Line profile of a trench defect observed by AFM (inset) showing the different metrics used.

Image of FIG. 2.
FIG. 2.

(a) Spectrum line-scan constituted of 51 pixels, each approximately 10 nm across, acquired across the trench defect shown in the inset (panchromatic CL image). (b) CL spectrum associated with pixel 13 (corresponding to the horizontal line in (a)) fitted with the two-Gaussian peak model. (c) Values of and obtained by the two-Gaussian peak model for each pixel along the line and the intensity weighted mean wavelength giving the redshift. (d) Values of and obtained by the two-Gaussian peak model for each pixel along the line and their sum giving the intensity ratio.

Image of FIG. 3.
FIG. 3.

Relationship between the intensity weighted mean wavelength, , measured within each trench defects compared to that of its immediate surroundings. The line defines whether the trench defect emission is redshifted (above the line) or blueshifted (below the line) compared to the surrounding material.

Image of FIG. 4.
FIG. 4.

Example of how (a) AFM, (b) SEM, and (c) panchromatic CL were performed on the same trench defects. For visibility, some of the defects are indicated in each scans with arrows labelled from (1) to (4).

Image of FIG. 5.
FIG. 5.

Relationship between the prominence of the defect (measured by AFM) and (a) the redshift and (b) the intensity ratio. The straight lines are a linear fit intended as a guide to the eye (coefficient of determination: R2 = 0.23 (a) and R2 < 0.01 (b)).

Image of FIG. 6.
FIG. 6.

Relationship between the trench defect area and (a) the redshift and (b) the intensity ratio. The straight lines are a linear fit intended as a guide to the eye (coefficient of determination: R2 < 0.01 (a) and R2 < 0.01 (b)).

Image of FIG. 7.
FIG. 7.

Relationship between the -thickness and (a) the redshift and (b) the intensity ratio. The straight lines are a linear fit intended as a guide to the eye (coefficient of determination: R2 = 0.63 (a) and R2 = 0.46 (b)).

Image of FIG. 8.
FIG. 8.

Variation of the -thickness with the number of QWs.

Image of FIG. 9.
FIG. 9.

Relationship between the redshift and the intensity ratio.

Tables

Generic image for table
Table I.

InGaN QW composition (xIn) and well and barrier thicknesses (twell, tbarrier) of the investigated structures, as obtained by X-ray diffraction of the 002 reflection.

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/content/aip/journal/jap/113/7/10.1063/1.4792505
2013-02-15
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792505
10.1063/1.4792505
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