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Investigating the origin of intense photoluminescence in Si capping layer on Ge1−xSnx nanodots by transmission electron microscopy
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10.1063/1.4792647
/content/aip/journal/jap/113/7/10.1063/1.4792647
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792647
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Figures

Image of FIG. 1.
FIG. 1.

Structural and elemental analyses for the as-grown Si/Ge1− x Sn ND/SiO2/Si stacking structure. (a) A par of HAADF- (b) and lower-angle ADF-STEM images. Defect contrasts are indicated by the arrows in (b). (c) A drawing of the Si/Ge1− x Sn ND/SiO2/Si stacking structure. (d) HRTEM image, showing contrasts of stacking fault (SF) and ND. (c),(e)–(g) STEM-EDX spectra obtained at the positions e, f, and g indicated in (a) and (b).

Image of FIG. 2.
FIG. 2.

(a) HAADF-STEM images of the annealed Si/Ge1− x Sn-ND/SiO2/Si structures. (b)–(e) STEM-EDX spectra obtained at positions of b, c, d, and e in 2(a).

Image of FIG. 3.
FIG. 3.

(a) and (b) HRTEM images of Si cap/Si substrate interfaces after annealing, showing the array of amorphous precipitates with ∼2 nm in size. (c) HAADF-STEM image of the Si cap/Si substrate interfaces, where positions of the amorphous precipitates are indicated by the arrows. (d) Intensity profiles along the arrows, A–A′ and B–B′ in (c).

Image of FIG. 4.
FIG. 4.

(a) HAADF-STEM image of the annealed Si/Ge1− x Sn-ND/SiO2/Si structure, showing nanoparticles on the surfaces of the Si capping layer. (b), (c) STEM-EDX spectra obtained from the nanoparticles b and c indicated by the arrows in (a), revealing that Sn is constituent of the nanoparticles. (c) HRTEM image, showing a nanoparticle with the lattice spacing of 0.34 nm on the oxidized Si capping surface.

Image of FIG. 5.
FIG. 5.

220 dark-filed TEM images of (a) as-grown and (b) annealed Si/Ge1− x Sn-ND/SiO2/Si structures.

Image of FIG. 6.
FIG. 6.

Model of structural changes in the Si/Ge1− x Sn-ND/SiO2/Si stacking structure from the (a) as-grown state to the (c) annealed state, where defects are not illustrated. Movements of elements are drawn in (b).

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/content/aip/journal/jap/113/7/10.1063/1.4792647
2013-02-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigating the origin of intense photoluminescence in Si capping layer on Ge1−xSnx nanodots by transmission electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792647
10.1063/1.4792647
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