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Investigating the origin of intense photoluminescence in Si capping layer on Ge1−xSnx nanodots by transmission electron microscopy
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10.1063/1.4792647
/content/aip/journal/jap/113/7/10.1063/1.4792647
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792647
/content/aip/journal/jap/113/7/10.1063/1.4792647
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/content/aip/journal/jap/113/7/10.1063/1.4792647
2013-02-15
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigating the origin of intense photoluminescence in Si capping layer on Ge1−xSnx nanodots by transmission electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792647
10.1063/1.4792647
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