Structural and elemental analyses for the as-grown Si/Ge1− x Sn ND/SiO2/Si stacking structure. (a) A par of HAADF- (b) and lower-angle ADF-STEM images. Defect contrasts are indicated by the arrows in (b). (c) A drawing of the Si/Ge1− x Sn ND/SiO2/Si stacking structure. (d) HRTEM image, showing contrasts of stacking fault (SF) and ND. (c),(e)–(g) STEM-EDX spectra obtained at the positions e, f, and g indicated in (a) and (b).
(a) HAADF-STEM images of the annealed Si/Ge1− x Sn-ND/SiO2/Si structures. (b)–(e) STEM-EDX spectra obtained at positions of b, c, d, and e in 2(a).
(a) and (b) HRTEM images of Si cap/Si substrate interfaces after annealing, showing the array of amorphous precipitates with ∼2 nm in size. (c) HAADF-STEM image of the Si cap/Si substrate interfaces, where positions of the amorphous precipitates are indicated by the arrows. (d) Intensity profiles along the arrows, A–A′ and B–B′ in (c).
(a) HAADF-STEM image of the annealed Si/Ge1− x Sn-ND/SiO2/Si structure, showing nanoparticles on the surfaces of the Si capping layer. (b), (c) STEM-EDX spectra obtained from the nanoparticles b and c indicated by the arrows in (a), revealing that Sn is constituent of the nanoparticles. (c) HRTEM image, showing a nanoparticle with the lattice spacing of 0.34 nm on the oxidized Si capping surface.
220 dark-filed TEM images of (a) as-grown and (b) annealed Si/Ge1− x Sn-ND/SiO2/Si structures.
Model of structural changes in the Si/Ge1− x Sn-ND/SiO2/Si stacking structure from the (a) as-grown state to the (c) annealed state, where defects are not illustrated. Movements of elements are drawn in (b).
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