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Oxygen diffusivity in silicon derived from dynamical X-ray diffraction
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10.1063/1.4792747
/content/aip/journal/jap/113/7/10.1063/1.4792747
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792747

Figures

Image of FIG. 1.
FIG. 1.

Detector image of a Laue exposure of the 400-reflection of the silicon wedge for a tube to sample distance of 3 m and a sample to detector distance of 1.5 m (defocussed setup); the two dark lines in the Bragg reflection correspond to the characteristic tungsten Kα1 and Kα2-lines. The illuminated sample volume and thus the divergence were afterwards decreased by a slit system in order to receive signal only from the Kα1-line corresponding to an energy of 59.3 keV.

Image of FIG. 2.
FIG. 2.

STEM BF image of a plate-like oxygen precipitate in the (001) view observed in a sample annealed at 650 °C for 141 h followed by an anneal at 900 °C for 20 h. Note that the size of precipitate corresponds to its diagonal length.

Image of FIG. 3.
FIG. 3.

EDX images of plate-like oxygen precipitates in the (001) view observed in the sample annealed at 650 °C for 141 h followed by an anneal at 900 °C for 20 h; image of a precipitate oriented perpendicular to the plane (left) (same as in Fig. 1 ), and image of a precipitate oriented parallel to the plane (right).

Image of FIG. 4.
FIG. 4.

Evolution of the average Bragg intensity with the annealing time at 900 °C. The black dotted line corresponds to the calculated ideal crystal behavior; from light grey to black 0 h, 1 h, 2 h, 4 h, 10 h, and 19.5 h, respectively.

Image of FIG. 5.
FIG. 5.

Comparison of the experimental data with the statistical dynamical theory for the measurement at the beginning of the annealing time (light grey), for an annealing of 2 h (dark grey) and at the end of the annealing at 19.5 h (black).

Image of FIG. 6.
FIG. 6.

Fit of the square of the precipitate radius against annealing time at 900 °C within Ham's theory of precipitation.

Tables

Generic image for table
Table I.

Values of the static Debye-Waller factor E as a function of the annealing time.

Generic image for table
Table II.

Equivalent radius of the precipitates for different annealing times at 900 °C.

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/content/aip/journal/jap/113/7/10.1063/1.4792747
2013-02-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxygen diffusivity in silicon derived from dynamical X-ray diffraction
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792747
10.1063/1.4792747
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