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The electrostatics of Ta2O5 in Si-based metal oxide semiconductor devices
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10.1063/1.4792750
/content/aip/journal/jap/113/7/10.1063/1.4792750
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792750
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section of the different samples, (a) thick Ta2O5 layer on SiO2, (b) reference sample with no Ta2O5 (c)–(g) varying Ta2O5 position in a Al2O3 with x = 0,2,4,6, and 8 nm.

Image of FIG. 2.
FIG. 2.

(a) Cross section TEM micrograph of a 6.1 nm Ta2O5/4.5 nm SiO2/Si stack. (b) Capacitance-voltage curves compared to a reference sample without Ta2O5. The lines connect the data points for clarity. (c) Ta 4f XPS spectrum.

Image of FIG. 3.
FIG. 3.

O 1s XPS spectrum and its EELS tail; inset showing an enlargement of the dashed rectangle with the details of band gap extraction, bottom bar showing the fitting error.

Image of FIG. 4.
FIG. 4.

Cross-section TEM micrograph of a x = 8 nm sample (Fig. 1(g) ) at a low (a) and high (b) magnifications.

Image of FIG. 5.
FIG. 5.

(a) Capacitance-voltage curves of the Ta2O5-Al2O3 system and (b)the effect of the position of a Ta2O5 layer (x) on the flatband voltage.

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/content/aip/journal/jap/113/7/10.1063/1.4792750
2013-02-20
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The electrostatics of Ta2O5 in Si-based metal oxide semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/7/10.1063/1.4792750
10.1063/1.4792750
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