Schematic cross section of the different samples, (a) thick Ta2O5 layer on SiO2, (b) reference sample with no Ta2O5 (c)–(g) varying Ta2O5 position in a Al2O3 with x = 0,2,4,6, and 8 nm.
(a) Cross section TEM micrograph of a 6.1 nm Ta2O5/4.5 nm SiO2/Si stack. (b) Capacitance-voltage curves compared to a reference sample without Ta2O5. The lines connect the data points for clarity. (c) Ta 4f XPS spectrum.
O 1s XPS spectrum and its EELS tail; inset showing an enlargement of the dashed rectangle with the details of band gap extraction, bottom bar showing the fitting error.
Cross-section TEM micrograph of a x = 8 nm sample (Fig. 1(g) ) at a low (a) and high (b) magnifications.
(a) Capacitance-voltage curves of the Ta2O5-Al2O3 system and (b)the effect of the position of a Ta2O5 layer (x) on the flatband voltage.
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