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Aggravated efficiency droop in vertical-structured gallium nitride light-emitting diodes induced by high temperature aging
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10.1063/1.4790594
/content/aip/journal/jap/113/8/10.1063/1.4790594
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/8/10.1063/1.4790594
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Curves showing luminous efficiencies as a function of operating currents after aging for different periods at temperatures: (a) 60 °C; (b) 90 °C; (c)120 °C; (d) 150 °C.

Image of FIG. 2.
FIG. 2.

Curves showing the normalized luminous efficiency as a function of aging time at different measuring currents under aging conditions: (a) 60 °C, (b) 150 °C, where efficiencies are normalized by the corresponding initial values before stress.

Image of FIG. 3.
FIG. 3.

I-V characteristics of LED chips after aging for different periods at temperatures: (a) 60 °C, (b) 150 °C.

Image of FIG. 4.
FIG. 4.

Schematic drawing of an LED chip being eutectic bonded on a MCPCB.

Image of FIG. 5.
FIG. 5.

Scanning acoustic image of the LED sample after aging at 150 °C for 463 h.

Image of FIG. 6.
FIG. 6.

Reflectivity of the fabricated Ag film: before aging and after aging for 463 h at 150 °C.

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/content/aip/journal/jap/113/8/10.1063/1.4790594
2013-02-27
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Aggravated efficiency droop in vertical-structured gallium nitride light-emitting diodes induced by high temperature aging
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/8/10.1063/1.4790594
10.1063/1.4790594
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