(a) The first 3 peaks observed for device 1 at T = 77 K, W = 0.620 kG/μs, and (b) Peak amplitude vs the delay time (the data are listed in Table II ).
Spectrum obtained for device 2 at T = 77 K and W = 0.620 kG/μs.
Dependence of the g-factor difference for d-FM-DM-CM devices on (a) CM layer thickness; (b) FM layer thickness.
Dependences of relaxation rate for the d-FM-DM-CM devices on (a) needle tip diameter d; (b) CM layer thickness; (c) DM layer thickness; and (d) FM layer thickness.
Dependences of (a) g-factor and (b) relaxation rate (τ)−1 for d-FM1-DM-FM2 device on FM2 layer thickness.
Temperature dependence of relaxation rate (τ)−1 for device 1.
The exchange spectrum of the two-layer device 3 (see Table I ) recorded at T = 77 K and W = 0.620 kG/μs−1.
The interaction scheme.
The SPSQF devices used in the first series of experiments.
Amplitudes and positions of the first 3 peaks in the exchange spectrum.
Values of g-factors and spin-lattice relaxation times of spin polarized states in three-layer nanostructured sandwich devices.
The dependences of g-factor and spin-polarized state relaxation rate on FM2 layer thickness: d = 0.05 mm, h F1 = 7.7 nm, and h C = 12.1 nm.
Temperature dependence of the g-factor value and relaxation time of spin-polarized states for the three-layer device 1 (see Table I for the dimensions).
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