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Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering
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10.1063/1.4793507
/content/aip/journal/jap/113/8/10.1063/1.4793507
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/8/10.1063/1.4793507
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XTEM images of Si implanted with Li (150 keV and 7 × 1015 cm−2) at liquid nitrogen temperature: (a) WBDF taken at g 111 of as-implanted sample and superimposed SRIM calculation, (b) selected area diffraction pattern of the front region, (c) selected area diffraction pattern of the buried layer, (d) selected area diffraction pattern of the rear region, (e) HRTEM of front a/c interface taken on (101) axis, (f) HRTEM of upper a/c interface taken on (101) axis.

Image of FIG. 2.
FIG. 2.

XTEM images of Si implanted with Li (150 keV and 7 × 1015 cm−2) at nitrogen temperature: (a) WBDF taken at g 111 of as-implanted, (b) bright field after annealing at 400 °C-30 min, (c) WBDF taken at g 111 after annealing at 600 °C-30 min. The vertical contrast close to the surface is an artifact produced during specimen preparation. In the insets, selected area diffraction pattern from the area indicated by the arrow.

Image of FIG. 3.
FIG. 3.

Evolution of the RBS/C spectra obtained after Li implantation (150 keV and 7 × 1015 cm−2) at liquid nitrogen temperature for increasing isochronal (30 min) annealing temperature.

Image of FIG. 4.
FIG. 4.

Schematic evolution of the amorphous layer obtained after Li implantation (150 keV and 7 × 1015 cm−2) at nitrogen temperature with annealing temperature (30 min).

Image of FIG. 5.
FIG. 5.

Cross-sectional TEM micrograph of silicon sample implanted at 250 °C with 50 keV Ne at a fluence of 2 × 1016 cm−2 after annealing at 800 °C for 30 min. Underfocus image acquired in kinematical diffraction conditions.

Image of FIG. 6.
FIG. 6.

Cross-sectional TEM micrographs of silicon sample implanted at 77 K with 150 keV Li at a fluence of 7 × 1015 cm−2, annealed at 400 °C for 30 min and subsequently implanted at 250 °C with 50 keV Ne at a fluence of 2 × 1016 cm−2: (a) Bright field image. (b) WBDF image (g, 5g) g = 〈111〉.

Image of FIG. 7.
FIG. 7.

Cross-sectional TEM (accelerating voltage 200 kV) micrographs ofsilicon sample implanted at 77 K with 150 keV Li at a fluence of 7 × 1015 cm−2, annealed at 400 °C for 30 min and subsequently implanted at 250 °C with 50 keV Ne at a fluence of 2 × 1016 cm−2 and annealed at 800 °C for 30 min: WBDF image (g, 5g) g = 〈100〉. In the inset, bright field image of the bubble layer.

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/content/aip/journal/jap/113/8/10.1063/1.4793507
2013-02-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/8/10.1063/1.4793507
10.1063/1.4793507
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