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Study of influence of domain structure on observed magnetoresistance anomalies in GaMnAs
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10.1063/1.4794012
/content/aip/journal/jap/113/9/10.1063/1.4794012
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/9/10.1063/1.4794012
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Hysteresis loops in RXY measured at different temperatures in the normal configuration. (b) Relative values of magnetoresistance measured at different temperatures in the normal configuration.

Image of FIG. 2.
FIG. 2.

Three examples (A, B, and C) of the measured and simulated magnetoresistance versus magnetic field dependences with the corresponding assumed domain structure (bottom graphs). The subsequent steps of the simulations reflect domain reversal triggered by magnetic field evolution. Simulated magnetoresistance was calculated from voltage difference between potentials of two longitudinal contacts VC1 and VC2, where VC1 = 0.5·(V1,484 + V2,485) and VC2 = 0.5·(V1,504 + V2,505). The colors in the bottom graphs indicate areas of different domain orientations (and different conductivity tensors), black for , and grey for .

Image of FIG. 3.
FIG. 3.

Sketch of resistor net used in the current flow and potential distribution calculations.

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/content/aip/journal/jap/113/9/10.1063/1.4794012
2013-03-06
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of influence of domain structure on observed magnetoresistance anomalies in GaMnAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/9/10.1063/1.4794012
10.1063/1.4794012
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