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Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure
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10.1063/1.4811443
/content/aip/journal/jap/114/1/10.1063/1.4811443
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/1/10.1063/1.4811443

Figures

Image of FIG. 1.
FIG. 1.

AFM images (5 m × 5 m) of AlSb films grown with various temperatures. (a) A1 600 °C, (b) A2 615 °C, (c) A3 635 °C, (d) A4 650 °C, (e) A5 660 °C, and (f) A6 680 °C. Uniformly distributed mounds with obvious spiral steps can be seen on the surface. As growth temperature changes, the density, mean size, and mean height also changes.

Image of FIG. 2.
FIG. 2.

Change of mounds mean diameter and mean height versus growth temperature. The sample with growth temperature 650 °C has the lowest mound mean height and largest mean diameter, which indicates the most flat surface.

Image of FIG. 3.
FIG. 3.

Change of mounds density and AFM value versus growth temperature. With both low mounds density and small AFM value, sample grown at 650 °C is the most proper buffer layer for InAs/AlSb QW growth in sample series A.

Image of FIG. 4.
FIG. 4.

AFM images (10 m × 10 m) of AlGaSb films grown with various temperatures. (a) B1 560 °C, (b) B2 600 °C, and (c) B3 640 °C. The mounds here are with no spiral steps. The uniformity and density of the mounds both change a lot as the growth temperature increases.

Image of FIG. 5.
FIG. 5.

Schematic diagram of the InAs/AlSb deep quantum well structure. AlSb/InAs/AlSb sandwiched structure (5.5 nm AlSb bottom barrier, 14 nm InAs channel, and 13 nm AlSb top barrier) was grown after buffer layer. A 5 nm InAs cap was grown to prevent AlSb layer from oxidization. All the layers are intrinsic.

Image of FIG. 6.
FIG. 6.

Shutter sequence used to grow InAs/AlSb quantum well. 4-s growth of InSb can make sure the bottom interface InSb-like and a 6-s pause was used before the growth of top barrier to smooth the top interface.

Image of FIG. 7.
FIG. 7.

AFM images (5 m × 5 m) of InAs/AlSb quantum well grown with different buffer layers. (a) C1 with AlSb buffer layer grown at 650 °C and V/III ratio of 8, (b) C2 with AlGaSb buffer layer grown at 600 °C and V/III ratio of 5, (c) C3 with AlGaSb buffer layer grown at 640 °C and V/III ratio of 5. Large number of cracks can be seen for C1 and mounds show on surface of C2 and C3.

Image of FIG. 8.
FIG. 8.

Cross-sectional TEM micrograph of InAs/AlSb quantum well grown with different buffer layers. (a) C1 with AlSb buffer layer grown at 650 °C and V/III ratio of 8, (b) C2 with AlGaSb buffer layer grown at 600 °C and V/III ratio of 5, (c) C3 with AlGaSb buffer layer grown at 640 °C and V/III ratio of 5. C3 has the most smooth and abrupt AlSb/InAs/AlSb interface, which indicate a heterojunction with high crystalline quality and little ion diffusion and intermixing.

Tables

Generic image for table
Table I.

AFM measurements results of AlSb films grown with various V/III ratios and the same growth temperature (650 °C).

Generic image for table
Table II.

AFM measurements results of AlGaSb films grown with various growth temperatures (560 °C, 600 °C, 640 °C).

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/content/aip/journal/jap/114/1/10.1063/1.4811443
2013-07-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/1/10.1063/1.4811443
10.1063/1.4811443
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