Raman spectrum (together with fitting curves) of rf−sputtered films, as−deposited, with a thickness of (a) 39 nm and (b) 253 nm.
Integral intensity (II) of the peak of rf− and dc−sputtered films.
Vibrational modes in anatase, three−dimensional vibrations depicted in the (200)−plane, based on factor group analysis. 30
Shift of the Raman lines vs. the strain in c−direction (rf− and dc−sputtered samples).
Half width of the peak vs. crystallite size as deduced from XRD, including results from the literature. 4,18,27,28,35,36
Transmittance of a (a) dc−deposited and (b) rf−deposited film together with fitting curves generated using two different dielectric models, one with one band gap, the other one with two band gaps. The imaginary part of the dielectric constant is given as the green curve (as−deposited film) and the red curves (post−heated).
Thickness obtained from the simulation of the transmittance vs thickness measured with a profilometer. Error bars in the thickness data determined using transmittance spectra is small enough to be noticeable in the plot. The standard deviations determined in this case are below ±3.5 nm.
Semi logarithmic plot of the contributions of the two band gap models to the imaginary part of the dielectric function. The vertical lines indicate the position of the respective band gap BG and BG–γ, where γ is a measure of the energetic width of the disordered states.
Band gap for dc−sputtered and rf−sputtered films as a function of film thickness and its comparison with literature values. 3,17,20,42,43
Band gap as a function of crystallite size, our data compared with literature data. 3,4,7,17,18,20
Refractive index at 18105 cm−1 (550 nm); the rf−sputtered films are indicated with dashed lines.
Refractive index at 550 nm, our data together with literature results. 3,4,7,17,20 Error bars in the refractive indices data are too small to be noticeable in the plot. The standard deviations determined in this case are below ±1%.
Article metrics loading...
Full text loading...