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Thickness dependence of the growth of magnetron-sputtered TiO2 films studied by Raman and optical transmittance spectroscopy
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10.1063/1.4811682
/content/aip/journal/jap/114/1/10.1063/1.4811682
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/1/10.1063/1.4811682
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman spectrum (together with fitting curves) of rf−sputtered films, as−deposited, with a thickness of (a) 39 nm and (b) 253 nm.

Image of FIG. 2.
FIG. 2.

Integral intensity (II) of the peak of rf− and dc−sputtered films.

Image of FIG. 3.
FIG. 3.

Vibrational modes in anatase, three−dimensional vibrations depicted in the (200)−plane, based on factor group analysis.

Image of FIG. 4.
FIG. 4.

Shift of the Raman lines vs. the strain in c−direction (rf− and dc−sputtered samples).

Image of FIG. 5.
FIG. 5.

Half width of the peak vs. crystallite size as deduced from XRD, including results from the literature.

Image of FIG. 6.
FIG. 6.

Transmittance of a (a) dc−deposited and (b) rf−deposited film together with fitting curves generated using two different dielectric models, one with one band gap, the other one with two band gaps. The imaginary part of the dielectric constant is given as the green curve (as−deposited film) and the red curves (post−heated).

Image of FIG. 7.
FIG. 7.

Thickness obtained from the simulation of the transmittance vs thickness measured with a profilometer. Error bars in the thickness data determined using transmittance spectra is small enough to be noticeable in the plot. The standard deviations determined in this case are below ±3.5 nm.

Image of FIG. 8.
FIG. 8.

Semi logarithmic plot of the contributions of the two band gap models to the imaginary part of the dielectric function. The vertical lines indicate the position of the respective band gap BG and BG–γ, where γ is a measure of the energetic width of the disordered states.

Image of FIG. 9.
FIG. 9.

Band gap for dc−sputtered and rf−sputtered films as a function of film thickness and its comparison with literature values.

Image of FIG. 10.
FIG. 10.

Band gap as a function of crystallite size, our data compared with literature data.

Image of FIG. 11.
FIG. 11.

Refractive index at 18105 cm (550 nm); the rf−sputtered films are indicated with dashed lines.

Image of FIG. 12.
FIG. 12.

Refractive index at 550 nm, our data together with literature results. Error bars in the refractive indices data are too small to be noticeable in the plot. The standard deviations determined in this case are below ±1%.

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/content/aip/journal/jap/114/1/10.1063/1.4811682
2013-07-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thickness dependence of the growth of magnetron-sputtered TiO2 films studied by Raman and optical transmittance spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/1/10.1063/1.4811682
10.1063/1.4811682
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