1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate
Rent:
Rent this article for
USD
10.1063/1.4812231
/content/aip/journal/jap/114/1/10.1063/1.4812231
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/1/10.1063/1.4812231

Figures

Image of FIG. 1.
FIG. 1.

(a) Temperature-variable current-voltage curves of InGaN LEDgrown on Si substrate from 80 K to 400 K. Plots of log ( ) vs. relation with (b) low (1.2 < < 1.8 ) and (c) intermediate (1.6 < < 2.5 ) bias while varying the temperature from 80 K to 400 K.

Image of FIG. 2.
FIG. 2.

Extracted characteristic energies and corresponding ideality factors in the range of (a) low (1.2 < < 1.8 ) and (b) intermediate (1.6 < < 2.5 ) forward bias.

Image of FIG. 3.
FIG. 3.

(a) Schematic diagram of C-AFM measurement setup. (b) Topography of InGaN LED structures grown on Si substrate. Current map of C-AFM measured from InGaN MQW surface where −5 V is applied to AFM cantilever; (c) 5 m × 5 m and (d) 1 m × 1 m for zoom-in view.

Tables

Generic image for table
Table I.

Comparison of characteristic energy and tunneling entity in low and intermediate bias regimes of InGaN LED grown on GaN, AlO, and Si substrates.

Loading

Article metrics loading...

/content/aip/journal/jap/114/1/10.1063/1.4812231
2013-07-01
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/1/10.1063/1.4812231
10.1063/1.4812231
SEARCH_EXPAND_ITEM