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(a) Temperature-variable current-voltage curves of InGaN LEDgrown on Si substrate from 80 K to 400 K. Plots of log ( ) vs. relation with (b) low (1.2 < < 1.8 ) and (c) intermediate (1.6 < < 2.5 ) bias while varying the temperature from 80 K to 400 K.
Extracted characteristic energies and corresponding ideality factors in the range of (a) low (1.2 < < 1.8 ) and (b) intermediate (1.6 < < 2.5 ) forward bias.
(a) Schematic diagram of C-AFM measurement setup. (b) Topography of InGaN LED structures grown on Si substrate. Current map of C-AFM measured from InGaN MQW surface where −5 V is applied to AFM cantilever; (c) 5 μm × 5 μm and (d) 1 μm × 1 μm for zoom-in view.
Comparison of characteristic energy and tunneling entity in low and intermediate bias regimes of InGaN LED grown on GaN, Al2O3, and Si substrates.
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