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Effects of strain on the electrical properties of silicon carbide
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10.1063/1.4812574
/content/aip/journal/jap/114/1/10.1063/1.4812574
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/1/10.1063/1.4812574
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

First Brillouin zone and changes upon stretching. Left: The equilibrium hexagonal 1st Brillouin zone and the special k-points . The points and are equivalent. Right: The 1st Brillouin zone after stretching to +2%. The k1 vector shortens, and is no longer equivalent to and .

Image of FIG. 2.
FIG. 2.

The change in the band gap ( ) is reported as a function of percent lattice strain.

Image of FIG. 3.
FIG. 3.

The effective masses are reported as a function of percent lattice strain. At the conduction band minima at , there are three effective masses in the directions toward and . At , the effective mass in the direction is, , which is not included below for clarity.

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/content/aip/journal/jap/114/1/10.1063/1.4812574
2013-07-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of strain on the electrical properties of silicon carbide
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/1/10.1063/1.4812574
10.1063/1.4812574
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