Effect of the oxygen partial pressure on the deposition rate of MoO3 films.
Effect of oxygen partial pressure and annealing temperature on the GIXRD patterns of reactive-sputtered MoO3 films: (a) as-deposited, (b) annealed at 300 °C, (c) 400 °C, and (d) 500 °C.
(a) XPS survey spectrum and (b) high resolution scan of Mo 3d doublet core levels of MoO3 film deposited at O2/(O2 + Ar) = 35%.
XPS core level binding energy of Mo 3d doublets of MoO3 films deposited at room temperature at different oxygen partial pressures. Dotted and dashed lines represent the Mo+6 and Mo+5 doublets, respectively.
The percentage of the Mo+6 states presented in the MoO3 films sputtered at different oxygen partial pressures and at different annealing temperatures.
Transmittance plot of the MoO3 films deposited at different O2/(O2 + Ar) ratios.
Direct (a) and indirect (b) transitions for MoO3 films deposited at O2/(O2 + Ar) = 35%.
Variation of optical bandgap as a function of O2/(O2 + Ar) ratio and annealing temperature.
Core level binding energies of MoO3 film, deposited at room temperature with O2/(O2 + Ar) = 35%.
Core level binding energies of molybdenum and oxygen in as-deposited MoO3 films.
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