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Characterization of reactively sputtered molybdenum oxide films for solar cell application
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10.1063/1.4812587
/content/aip/journal/jap/114/1/10.1063/1.4812587
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/1/10.1063/1.4812587

Figures

Image of FIG. 1.
FIG. 1.

Effect of the oxygen partial pressure on the deposition rate of MoO films.

Image of FIG. 2.
FIG. 2.

Effect of oxygen partial pressure and annealing temperature on the GIXRD patterns of reactive-sputtered MoO films: (a) as-deposited, (b) annealed at 300 °C, (c) 400 °C, and (d) 500 °C.

Image of FIG. 3.
FIG. 3.

(a) XPS survey spectrum and (b) high resolution scan of Mo 3d doublet core levels of MoO film deposited at O/(O + Ar) = 35%.

Image of FIG. 4.
FIG. 4.

XPS core level binding energy of Mo 3d doublets of MoO films deposited at room temperature at different oxygen partial pressures. Dotted and dashed lines represent the Mo and Mo doublets, respectively.

Image of FIG. 5.
FIG. 5.

The percentage of the Mo states presented in the MoO films sputtered at different oxygen partial pressures and at different annealing temperatures.

Image of FIG. 6.
FIG. 6.

Transmittance plot of the MoO films deposited at different O/(O + Ar) ratios.

Image of FIG. 7.
FIG. 7.

Direct (a) and indirect (b) transitions for MoO films deposited at O/(O + Ar) = 35%.

Image of FIG. 8.
FIG. 8.

Variation of optical bandgap as a function of O/(O + Ar) ratio and annealing temperature.

Tables

Generic image for table
Table I.

Core level binding energies of MoO film, deposited at room temperature with O/(O + Ar) = 35%.

Generic image for table
Table II.

Core level binding energies of molybdenum and oxygen in as-deposited MoO films.

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/content/aip/journal/jap/114/1/10.1063/1.4812587
2013-07-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of reactively sputtered molybdenum oxide films for solar cell application
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/1/10.1063/1.4812587
10.1063/1.4812587
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