(a) X-ray Diffraction patterns for MTJs. From bottom to top, post-annealing conditions: as deposited, T a = 200 °C, 300 °C, and 350 °C, respectively. (b) MS of bottom electrode Fe2CrSi for MTJs, as a function of T a .
(a) M-H loop for MTJs with T a = 200 °C, 350 °C, and 500 °C respectively. The inset is TMR ratio as a function of RA. (b) RA (solid circle) and TMR ratio (solid square) as a function of T a .
RA (solid circle) and TMR ratio (solid square) as a function of Mg layer thickness.
HRTEM of MTJs (a) without Mg layer insertion and (b) with t = 0.3 nm Mg layer insertion.
XPS results of atom (a) Fe, (b) Cr, and (c) Si at the interface between FCS and MgO barriers (top row), and (d) Fe, (e) Cr, and (f) Si at the center of FCS films (bottom row), respectively.
XPS results of atom Fe at the interface between FCS layer and MgO barrier for MTJs (a) as deposited, (b) T a = 250 °C, and (c) T a = 450 °C.
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