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Tunnel magnetoresistance effect and interface study in magnetic tunnel junctions using epitaxial Fe2CrSi Heusler alloy electrode
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10.1063/1.4812725
/content/aip/journal/jap/114/1/10.1063/1.4812725
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/1/10.1063/1.4812725
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Figures

Image of FIG. 1.
FIG. 1.

(a) X-ray Diffraction patterns for MTJs. From bottom to top, post-annealing conditions: as deposited, T = 200 °C, 300 °C, and 350 °C, respectively. (b) of bottom electrode FeCrSi for MTJs, as a function of T.

Image of FIG. 2.
FIG. 2.

(a) loop for MTJs with T = 200 °C, 350 °C, and 500 °C respectively. The inset is TMR ratio as a function of RA. (b) RA (solid circle) and TMR ratio (solid square) as a function of T.

Image of FIG. 3.
FIG. 3.

RA (solid circle) and TMR ratio (solid square) as a function of Mg layer thickness.

Image of FIG. 4.
FIG. 4.

HRTEM of MTJs (a) without Mg layer insertion and (b) with  = 0.3 nm Mg layer insertion.

Image of FIG. 5.
FIG. 5.

XPS results of atom (a) Fe, (b) Cr, and (c) Si at the interface between FCS and MgO barriers (top row), and (d) Fe, (e) Cr, and (f) Si at the center of FCS films (bottom row), respectively.

Image of FIG. 6.
FIG. 6.

XPS results of atom Fe at the interface between FCS layer and MgO barrier for MTJs (a) as deposited, (b) T = 250 °C, and (c) T = 450 °C.

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/content/aip/journal/jap/114/1/10.1063/1.4812725
2013-07-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunnel magnetoresistance effect and interface study in magnetic tunnel junctions using epitaxial Fe2CrSi Heusler alloy electrode
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/1/10.1063/1.4812725
10.1063/1.4812725
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