Ultrathin (<50 nm) zirconium oxide (ZrO2) films are being intensively studied as high-k dielectrics for future metal-oxide-semiconductor(MOS) technology. In this paper, ultrathin ZrO2films are deposited on silicon substrates by spin on deposition technique and annealed at 700 °C for different duration. The phase formation and morphological study have been performed by x-ray diffraction and scanning electron microscopy, respectively. Electrical properties of the films are investigated. The threshold voltages of the MOS structure were found to vary from −1.5 V to −2.5 V as the annealing time increases. The dielectric constants of the films are found to be 7.2–7.67 at 1 KHz. Leakage current of the films is found to increase with the annealing time. The dielectric breakdown field of the film is found to be 6.29–8.15 MV/cm.
Received 14 April 2013Accepted 17 June 2013Published online 01 July 2013
Authors would like to thank Director SSPL for his kind permission to publish this work. Authors also thank Ms. Mukesh Kumari, Magnetics & Advanced Ceramics Laboratory, IIT Delhi for her help in capacitance measurement.
Article outline: I. INTRODUCTION II. EXPERIMENTAL III. RESULTS AND DISCUSSIONS IV. CONCLUSIONS
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