Schematic relationship of the incident, the reflected, and the transmitted light waves at the interface of two optical media and the concept of GH shift.
Schematic distribution of the one-dimensional phase shift due to the transverse displacement when a photon beam tunnels a barrier with thickness.
(a) Perspective view of schematic construction of the SOI-WCM and GH effect based 1 × N optical switch with CMOS-compatible sub-micrometer scale waveguides and FCD effect based optical RIM effect and (b) the cross-sectional view of the equivalent MOS-capacitor structure with the gate voltage and drain-source voltage for controlling the free-carrier concentration at the WCM interface.
Schematic construction and condition of the multi-mode corner waveguide for maintaining the reflected optical beam to the output channel at the single-mode state, where the 2-mode length—Z = (3/2)Lπ is taken as standard.
Schematic regime of MOS capacitor structure for two switching interface modulation schemes at the corner waveguide/CTM interface with gate voltage Vg by controlling the concentration of free-carrier holes: (a) the accumulation process of free-carriers and (b) the depletion process of free-carriers.
Schematic MOS capacitor structure for extending the depletion layer of holes with drain-source voltage.
At 1550 nm wavelength, incident angle dependence of GH shift in the FTIR process for the two smaller waveguide sizes where only the x-polarization has optical guided-mode: (a) the 350 nm rib width having , so and (b) the 400 nm rib width having , so .
At 1550 nm wavelength, the incident angle dependence of GH shift for larger waveguide sizes with respect to different waveguide sizes for both the x- and y-polarizations: (a) and (b) for the two larger rib widths: 450 and 500 nm, respectively.
At 1550 nm wavelength, the concentration variation dependences of GH shift jumps of the two smaller waveguide sizes for the x-polarization with respect to three incident angles: (a) and (b) for the rib widths: 350 and 400 nm, respectively.
At 1550 nm wavelength and for the x-polarization, the concentration variation dependence of Maximum Switching Scale for the 400 nm rib waveguide with respect to three incident angle differences: 0.5°, 1.0°, and 1.5°.
Simulation for the relationships between the Maximum Switching Scale and the concentration variation of free-carrier holes with respect to four rib widths at x-polarization.
Simulation results for several rib widths of single-mode operation conditions.
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