Phase diagram of Sb-Te alloys. 20
The DSC curve of TST powder. The inset shows the data retention of ST and TST films.
(a) and (b) TEM images with different resolutions, (c) HRTEM image, and (d) SAED pattern for crystalline ST sample. The corresponding intensity line profiles of (a) HRTEM image and (d) SAED pattern, respectively.
(a) and (b) TEM images with different resolutions, (c) HRTEM image, and (d) SAED pattern for crystalline TST sample. (e)–(g) The element mapping images of Ti, Sb, and Te in TST film. The area is marked by dotted box in figure (a).
(a) Resistance-voltage curves of PCRAM based on TST film. The inset shows the cross-sectional structure of a PCM cell. (b) The set speed for TST-based PCRAM cell. (c) Measured resistance as a function of time for TST-based PCRAM cell in set and reset states. (d) Endurance characteristics of TST-based PCRAM cell.
Analyzed composition of sputtered Sb4Te and Ti-doped Sb4Te films.
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