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Highly nonlinear defect-induced carrier recombination rates in semiconductors
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10.1063/1.4824065
/content/aip/journal/jap/114/14/10.1063/1.4824065
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/14/10.1063/1.4824065
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Figures

Image of FIG. 1.
FIG. 1.

The upper panel shows calculated defect-induced recombination rates and the lower panel shows the populations of the various defect charge states, both as a function of carrier concentration (with the electron concentration equal to the hole concentration) for a multi-level, negative-U defect. The defect has three levels at  0.45 eV,  0.30 eV, and  0.20 eV relative to the valence band edge. The dotted lines in the upper panel show the Shockley-Read-Hall rate for each defect level calculated separately. The dashed line in the upper panel plots a function proportional to the fourth power of the carrier concentration scaled to agree with the calculated recombination rate in the region of maximum slope.

Image of FIG. 2.
FIG. 2.

The labeled curves show the calculated defect-induced recombination rate for different levels of n-type doping as a function of additional carrier concentration (beyond the doping) for the same defect studied in Fig. 1 .

Image of FIG. 3.
FIG. 3.

The labeled curves show the calculated defect-induced recombination rate for different levels of p-type doping as a function of additional carrier concentration (beyond the doping) for the same defect studied in Fig. 1 .

Image of FIG. 4.
FIG. 4.

The labeled curves show the calculated defect-induced recombination rate for different defect level positions as a function of carrier concentration (with the electron concentration equal to the hole concentration). The legend box indicates the defect levels used in each calculation in the order , , and .

Image of FIG. 5.
FIG. 5.

These curves plot the internal quantum efficiency as a function of current through the device when various non-radiative processes are included in our LED model. All of the curves include defect-induced recombination with a linear dependence on carrier density. In the dotted curve, this linear defect-induced recombination is the only non-radiative process. The solid and dashed curves add nonlinear defect-induced recombination and Auger recombination, respectively. Both nonlinear defect-induced recombination and Auger recombination are included in the dotted-dashed curve. For comparison, the dotted-dotted-dashed curve reproduces experimental external quantum efficiency measurements published in Ref. 26.

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/content/aip/journal/jap/114/14/10.1063/1.4824065
2013-10-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly nonlinear defect-induced carrier recombination rates in semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/14/10.1063/1.4824065
10.1063/1.4824065
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