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Diffusion of In and Ga in TiN/HfO2/InGaAs nanofilms
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View: Figures


Image of FIG. 1.
FIG. 1.

Angle resolved XPS spectra (dots) and fits (lines) for the as-deposited sample.

Image of FIG. 2.
FIG. 2.

Take-off angle dependence of the peak areas for the as-deposited sample. The solid lines correspond to theoretical behavior generated according to the physical model inserted.

Image of FIG. 3.
FIG. 3.

XPS spectra of (a) As 3, Ti 3, Hf 5, (b) Hf 4, As 3, (c) Ga 3, and (d) In 3 for the various samples. The Hf 4 signal remains relatively constant after the thermal treatments. However, a slight increment in the Ga-O signal and an oxidation in the In 3 region is observed when the anneal temperature was above 500  °C.

Image of FIG. 4.
FIG. 4.

The experimental dependence of the area of In and Ga peaks associated with O bonds (symbols) are compared with the theoretical behavior (lines) under different scenarios of their location. This comparison allows for a robust determination of their depth distribution. The dependence of the signal from oxidized indium for the (a) 500  °C/120 s sample and (b) 700  °C/10 s sample is clearly compatible with a location in the metallic layer (curves “2”) and incompatible with a location at the interface (curves “1”), indicating the presence of indium in the Ti layer. (c) After 700  °C annealing, the location of the oxidized gallium signal is compatible with the metallic layer, indicating diffusion of Ga atoms from the substrate to this layer (curve “2”).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Diffusion of In and Ga in TiN/HfO2/InGaAs nanofilms