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Light-current characteristic of a quantum well laser with asymmetric barrier layers
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10.1063/1.4824545
/content/aip/journal/jap/114/14/10.1063/1.4824545
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/14/10.1063/1.4824545
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy band diagrams of CQW laser (a) and ABL QW laser without (b) and with indent layers (c). The vertical solid arrows show the electron-hole recombination in the QW. The vertical dashed arrows show the parasitic electron-hole recombination outside the QW.

Image of FIG. 2.
FIG. 2.

Internal differential quantum efficiency in wide-lateral-size ( = 100 m) long-cavity ( = 2 mm) high-power structures vs. injection current. In Figs. 2–7 , the solid, dotted, and dashed-dotted curves are for the CQW laser and ABL QW lasers without and with indent layers, respectively.

Image of FIG. 3.
FIG. 3.

Light-current characteristic in high-power structures.

Image of FIG. 4.
FIG. 4.

Internal differential quantum efficiency in narrow-ridge ( = 3 m) short-cavity ( = 0.5 mm) structures vs. injection current.

Image of FIG. 5.
FIG. 5.

Light-current characteristic in narrow-ridge short-cavity structures.

Image of FIG. 6.
FIG. 6.

Parasitic recombination current outside the QW in high-power structures vs. injection current.

Image of FIG. 7.
FIG. 7.

Parasitic recombination current outside the QW in narrow-ridge short-cavity structures vs. injection current.

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/content/aip/journal/jap/114/14/10.1063/1.4824545
2013-10-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Light-current characteristic of a quantum well laser with asymmetric barrier layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/14/10.1063/1.4824545
10.1063/1.4824545
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