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p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient
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10.1063/1.4827379
/content/aip/journal/jap/114/16/10.1063/1.4827379
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/16/10.1063/1.4827379

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD spectra, (b) FWHM and positions of ZnO (002) peaks for SZO thin films for different growth temperatures.

Image of FIG. 2.
FIG. 2.

(a) AFM and (b) FESEM images of SZO film grown at 500 °C.

Image of FIG. 3.
FIG. 3.

(a) I-V characteristic of the p-ZnO/n-Si heterojunction with SZO film grown at 500 °C. Inset shows schematic structure of the p-n heterojunction under forward bias. Schematic energy band diagram of the p-ZnO/n-Si heterojunction is illustrated under (b) zero bias and (c) forward bias. (d) Ohmic contact formation with indium contacts on p-ZnO film and Si substrate.

Image of FIG. 4.
FIG. 4.

Room temperature XPS spectra of (a) Sb 3d and O1s peaks, (b) deconvoluted peak of Sb 3d3/2, and (c) Zn 2p for SZO films grown at 500 °C.

Tables

Generic image for table
Table I.

Influence of growth temperature on electrical properties of SZO and undoped ZnO thin films.

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/content/aip/journal/jap/114/16/10.1063/1.4827379
2013-10-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/16/10.1063/1.4827379
10.1063/1.4827379
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