(a) XRD spectra, (b) FWHM and positions of ZnO (002) peaks for SZO thin films for different growth temperatures.
(a) AFM and (b) FESEM images of SZO film grown at 500 °C.
(a) I-V characteristic of the p-ZnO/n-Si heterojunction with SZO film grown at 500 °C. Inset shows schematic structure of the p-n heterojunction under forward bias. Schematic energy band diagram of the p-ZnO/n-Si heterojunction is illustrated under (b) zero bias and (c) forward bias. (d) Ohmic contact formation with indium contacts on p-ZnO film and Si substrate.
Room temperature XPS spectra of (a) Sb 3d and O1s peaks, (b) deconvoluted peak of Sb 3d3/2, and (c) Zn 2p for SZO films grown at 500 °C.
Influence of growth temperature on electrical properties of SZO and undoped ZnO thin films.
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