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Electronic transition and electrical transport properties of delafossite CuCr1−xMg x O2 (0 ≤ x ≤ 12%) films prepared by the sol-gel method: A composition dependence study
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10.1063/1.4827856
/content/aip/journal/jap/114/16/10.1063/1.4827856
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/16/10.1063/1.4827856

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD patterns of the CuCrMgO (0 ≤  ≤ 12%) films grown on (001) sapphire substrates with 2θ = 10∘ to 80∘. (b) An enlarging region of 2θ = 14∘ to 24∘ to obviously show the minority phase peak. Note that the symbol (♦) indicates the delafossite phase, while the peak indicated by the symbol (⋄) corresponds to the cubic spinel phase.

Image of FIG. 2.
FIG. 2.

AFM three-dimensional images of the CuCrMgO films with the Mg compositions of (a) 0%, (b) 2%, (c) 4%, (d) 6%, (e) 8%, (f) 10%, and (g) 12%, respectively. Note that the scale height is 80 nm and the measured area is 2 × 2 m2.

Image of FIG. 3.
FIG. 3.

The surface SEM images of the CuCrMgO (0 ≤  ≤ 12%) films, whose magnification ration is 1:40 000. Note that the picture (h) indicates the cross-sectional image for the film with the Mg composition of 4%, and the scale is given in this picture.

Image of FIG. 4.
FIG. 4.

Raman spectra of the CuCrMgO (0 ≤  ≤ 12%) films under the excitation line of 488 nm. Note that the dashed lines show the positions of Raman-active phonon modes from the cubic spinel phase, indicated by the symbol (⋄). In addition, the symbol indicates the observed trace from the sapphire substrate.

Image of FIG. 5.
FIG. 5.

Transmittance spectra of the CuCrMgO (0 ≤  ≤ 12%) films. For comparison, the dashed line is the transmittance spectrum of the sapphire substrate. The inset (a) shows the absorption coefficient for the films with the Mg composition below 6%; and the inset (b) shows the absorption coefficient for the films with a higher Mg composition. Note that the arrow in the inset (a) indicates that there is a minimal band gap for the CuCrMgO films.

Image of FIG. 6.
FIG. 6.

(a) Plots of the photon energy for the estimation of direct optical band gap energies from the CuCrMgO (0 ≤  ≤ 12%) films. (b) Plots of the photon energy for the estimation of indirect band gap energies from the CuCrMgO (0 ≤  ≤ 12%) films.

Image of FIG. 7.
FIG. 7.

Schematic representation of the electronic band structure for the CuCrMgO films with the Mg compositions of (a) 0%, (b) 6%, and (c) 12%, respectively. denotes the Fermi energy level, denotes the weak absorption energy level, and indicate the splitting energy levels of the conduction band. Note that the symbols and indicate the nature hole and electron of the CuCrO material. However, the symbol ( ) indicates the hole induced by Mg-doping.

Image of FIG. 8.
FIG. 8.

(a) Plots of of the CuCrMgO (0 ≤  ≤ 12%) films, and the linear fit of each curve determines the slope coefficient . The arrows show the sample labels with the different component of Mg-doping. The positions of the arrows indicate the crossover () at which the electric conductivity starts to deviate from the thermal activation behavior. Note that the temperature range is 150–400 K. (b) Plots of of the CuCrMgO (0 ≤  ≤ 12%) films, and the temperature range is 80–220 K.

Image of FIG. 9.
FIG. 9.

The Mg composition dependence of (a) the slope coefficient , (b) the activation energy , and (c) at which the electric conductivity deviates from a thermal activation behavior, respectively. The solid lines and equations represent the linear fitting results to guide the eyes. Note that the shade part indicates different composition dependence behavior.

Image of Scheme 1.
Scheme 1.

Process of the preparation for Mg-doped CuCrO precursors and films.

Tables

Generic image for table
Table I.

The electrical properties of the CuCrMgO (0% ≤  ≤ 12%) films at room temperature.

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/content/aip/journal/jap/114/16/10.1063/1.4827856
2013-10-31
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic transition and electrical transport properties of delafossite CuCr1−xMgxO2 (0 ≤ x ≤ 12%) films prepared by the sol-gel method: A composition dependence study
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/16/10.1063/1.4827856
10.1063/1.4827856
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