1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots
Rent:
Rent this article for
USD
10.1063/1.4828734
/content/aip/journal/jap/114/17/10.1063/1.4828734
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/17/10.1063/1.4828734
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the cleaved-edge PL measurement setup consisting of excitation (L1) and collection (L2) lenses, an adjustable aperture (A), a rotatable half-WP, and a POL. The crossed arrows indicate the electric field orientations for TE and TM polarizations. The inset shows the layer structure of QD1 and QD2 (not in scale).

Image of FIG. 2.
FIG. 2.

Chemically sensitive cross-sectional  = (200) DFTEM micrographs. In (a) and (b) QD1 is viewed along the [01 ] and [011] zone axes, respectively. The dotted line in (a) shows an AFM profile of the groove before QD growth and GaAs capping. (c) Shows QD2 viewed along the [011] zone axis. The insets in (b) and (c) show AFM pictures of QD1 and QD2 before capping. The color scale in the AFM pictures is 24 nm.

Image of FIG. 3.
FIG. 3.

AFM cross-sections showing the groove shape after the NIL pattern has been overgrown with 60 nm of GaAs and after subsequent deposition of InAs. The cross-sections after the GaAs and InAs depositions are taken from insets 1 and 2, respectively.

Image of FIG. 4.
FIG. 4.

Cleaved-edge PL spectra for QD1 (a) and QD2 (b) measured at 10 K for TM and TE polarizations.

Image of FIG. 5.
FIG. 5.

HRTEM images of QD1 (a) and QD2 (c). (b), (d) Display the out-of-plane strain maps obtained from the HRTEM images in (a) and (c), respectively, after the analysis with the software.

Image of FIG. 6.
FIG. 6.

Schematic illustration of the QD and WL geometries used in the strain simulation for QD1 and QD2. The GaAs matrix has been excluded from the picture for the sake of clarity.

Image of FIG. 7.
FIG. 7.

2D cross-sectional strain maps obtained from 3D FEM simulations assuming a uniform In composition. (a), (b) Show the out-of-plane strain component for QD1 and QD2, respectively. (c), (d) Show the shear strain distribution for QD1 and QD2, respectively. The cross-sections in (a)-(d) are taken along the center of the QD.

Image of FIG. 8.
FIG. 8.

2D cross-sections showing an inverse-cone type graded In composition profile () for QD1 (a) and QD2 (b). The out-of-plane strain distributions for QD1 (c) and QD2 (d) are obtained from FEM simulations using the distributions in (a) and (b), respectively. The cross-sections in (a)-(d) are taken along the center of the QD.

Image of FIG. 9.
FIG. 9.

2D and 1D cross-sections of the shear strain and the hydrostatic strain distribution for QD1 with inverse-cone type graded In composition profile. The 2D distributions of (a) and (c) are mapped from the [01 ] cross-sectional plane running through the center of the QD. The 1D line profiles of (b) and (d) are taken along horizontal lines that run through the center of the QD at the height of 2.5 nm. The black (solid) and red (dotted) lines represent [01 ] and [011] directions, respectively. In (b) and (d) the location of the QD is indicated by the gray background and the GaAs matrix (M) by the white background.

Image of FIG. 10.
FIG. 10.

Simulated conduction and heavy hole valence band edges for QD1 with inverse-cone type graded composition profile (a) and QD2 composed of pure InAs (b). The band edge curves are taken vertically along the center of the QD geometries presented in Fig. 5 . The energies of the electron and hole ground states are indicated by the blue (solid) and red (dashed) lines, respectively.

Image of FIG. 11.
FIG. 11.

Simulated heavy hole (a) and split-off (b) valence band edges for QD1 with inverse-cone type graded composition profile. The band edge curves are taken along the horizontal [011] and [01 ] oriented lines that run through the center of QD1 at the height of 2.5 nm. The location of the QD in (a) and (b) is indicated by the gray background and the GaAs matrix (M) by the white background.

Image of FIG. 12.
FIG. 12.

Probability densities of the ground state electrons and holes for QD1 with inverse-cone type graded composition profile (a) and for QD2 composed of pure InAs (b).

Loading

Article metrics loading...

/content/aip/journal/jap/114/17/10.1063/1.4828734
2013-11-05
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/17/10.1063/1.4828734
10.1063/1.4828734
SEARCH_EXPAND_ITEM