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Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells
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10.1063/1.4831661
/content/aip/journal/jap/114/18/10.1063/1.4831661
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/18/10.1063/1.4831661

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of studied structures. Sweep voltage is applied to silver on top of silicon.

Image of FIG. 2.
FIG. 2.

Metal-semiconductor contact for highly doped ZnO and a-Si:H not drawn to scale. All values are in eV. Horizontal arrows represent the different transport mechanisms present. (a) Thermionic emission over the barrier, (b) field emission or tunneling through the barrier, and (c) thermionic field emission.

Image of FIG. 3.
FIG. 3.

J-V measurements of all ZnO/μc-Si:H and ZnO/a-Si:H heterojunctions. Current density levels are increased as doping concentration is increased for all samples.

Image of FIG. 4.
FIG. 4.

Energy band diagrams for both types of heterojunctions. Low doping of a-Si:H (15 nm thick) makes its Fermi level to keep almost constant. Since the Fermi level of a-Si:H Fermi is almost at the same position than ZnO work function, a low charge transfer from ZnO to a-Si:H does not produce enough band bending. For ZnO/μc-Si:H samples, a high doping of μc-Si:H reduces the barrier height and makes the depletion region thinner, allowing and increased tunneling transport mechanism.

Image of FIG. 5.
FIG. 5.

J-V-T forward bias measurements for ZnO/a-Si:H heterojunctions. Steeper slopes for lower doping concentrations and higher temperatures reveal the influence of thermionic emission transport.

Image of FIG. 6.
FIG. 6.

Influence of thermionic emission transport mechanism is revealed as temperature increases.

Image of FIG. 7.
FIG. 7.

Effective Schottky barrier height as a function of temperature for the ZnO/a-Si:H structures. The reduction of effective barrier as temperature decreases is attributed to contribution of transport mechanisms such as tunneling.

Image of FIG. 8.
FIG. 8.

J-V characteristics for ZnO/μc-Si:H heterojunctions with medium and higher doping concentrations in linear scale. Rectifying characteristics are no longer present for the samples with higher TMB flows. Ohmic characteristics are observed instead.

Image of FIG. 9.
FIG. 9.

External quantum efficiency measurements for thin film solar cells with different window layers. Despite the better electrical properties of ZnO/μc-Si:H contact, ZnO/a-Si:H window layer produces better cell performance due to allowing more light to reach the intrinsic region. The best result is obtained for a ZnO/μc-Si:H/a-Si:H window layer.

Tables

Generic image for table
Table I.

List of parameters used or TCAD simulations. 16–27

Generic image for table
Table II.

Solar cell parameters using different types of p-type window layers.

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/content/aip/journal/jap/114/18/10.1063/1.4831661
2013-11-14
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/18/10.1063/1.4831661
10.1063/1.4831661
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