Band lineups of the Ge/ Ge0.986Si0.014 QW under different tensile strains in Ge layer. The GeSi layer is unstrained.
Electron and hole energy dispersion curves of the Ge/Ge0.986Si0.014 QW under different strains.
Energy dispersion curves (a) and equal-energy contour plots of the first subband (b) of electrons at L valley of the Ge/Ge0.986Si0.014 QW. The contour plot energy range is from 600 to 2600 meV in step of 200 meV.
Γ and L valley electron concentrations versus their total electron concentrations for the Ge/Ge0.986Si0.014 QW.
TM mode optical gain (a) spontaneous radiative recombination rate spectra (b) of the 112/85 Å Ge/Ge0.986Si0.014 QW under different tensile strains. The n-type doping concentration in the Ge well is 30 × 1018 cm−3. The injection carrier concentration is 8 × 1018 cm−3.
TM mode optical gain (a) spontaneous radiative recombination rate spectra (b) of the 112/85 Å Ge/Ge0.986Si0.014 QW with the different n-type doping concentrations in the Ge well. The injection carrier concentration is 8 × 1018 cm−3. The tensile strain in the Ge QW is 1.61%.
TM mode gain spectra of the strained Ge QW at different injection carrier concentrations. The well doping concentration is Nd = 30 × 1018 cm−3.
Curves of peak gain and free carrier absorption loss versus injection carrier density. The n-type doping concentration in Ge is 30 × 1018 cm−3. The inset shows the net peak gain versus inject carrier density.
The band parameters at 300 K for bulk Ge and Si (Ref. 9 ).
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