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Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wells
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10.1063/1.4831750
/content/aip/journal/jap/114/18/10.1063/1.4831750
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/18/10.1063/1.4831750
/content/aip/journal/jap/114/18/10.1063/1.4831750
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/content/aip/journal/jap/114/18/10.1063/1.4831750
2013-11-14
2014-08-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/18/10.1063/1.4831750
10.1063/1.4831750
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