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Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices
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10.1063/1.4811810
/content/aip/journal/jap/114/2/10.1063/1.4811810
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4811810
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of metal-insulator-metal capacitor including the TAO-NL as a dielectric layer. (b) Bright-field TEM image of the TAO NL-based capacitor. (c) High resolution TEM image of the TAO NL with sublayer thickness of 0.5 nm. (d) Diffractogram taken from 45° tilted TEM image of Fig. 1(c) . (e) Inverse Fourier transform image calculated from Fig. 1(d) .

Image of FIG. 2.
FIG. 2.

Dielectric constant (a) and loss (b) vs. frequency, and leakage current density (c) vs. applied voltage as a function of the thickness of the interfacial AlO layer on top of the TAO NL. (d) Combined dielectric constant and loss at 100 Hz, and leakage current density at 1 V as a function of the thickness of the interfacial AlO layer on TAO NL.

Image of FIG. 3.
FIG. 3.

A 3-dimensional high-capacitance capacitor of the TAO NLs: (a) A schematics of metal-insulator-metal capacitor with 3-dimensional structure; (b) SEM image of the real capacitor with designated dimension, which consists of Pt/TAO NLs/Pt on Si substrate (Inset; a macroscopic top view of the capacitor); (c) and (d) magnified SEM view of the top and side indicated as rectangular areas in (b); (e) change of dielectric constant and loss of the 3 dimensional capacitor with 10 nm thick AlO capped 150 nm thick TAO NLs (10A-150TAO) to measured frequencies.

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/content/aip/journal/jap/114/2/10.1063/1.4811810
2013-07-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4811810
10.1063/1.4811810
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