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Chemical selective microstructural analysis of thin film using resonant x-ray reflectivity
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10.1063/1.4812245
/content/aip/journal/jap/114/2/10.1063/1.4812245
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4812245
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Measured SXRR profiles of partially decomposed BN films at far from (180 and 181 eV), at below (185 and 188.5 eV) and at near absorption edge (189.5, 190, and 191 eV) of B (B-edge ∼ 189.5 eV). Dotted arrow line represents the position of first global minima. (b) Measured optical constants of B near the edge. Vertical dotted arrows in (b) represent the energies at which the measured SXRR profiles are presented in (a).

Image of FIG. 2.
FIG. 2.

(a) Measured SXRR profiles of partially decomposed BN films across BO absorption edge (194.1 eV). Dotted arrow line represents the position of first global minima. (b) Measured optical constants of BO near the edge to understand and correlate with the observed SXRR profiles. Vertical dotted arrows in (b) represent the energies at which the measured SXRR profiles are presented in (a).

Image of FIG. 3.
FIG. 3.

Measured SXRR profile of partially decomposed BN thin films along with fitted profiles with varying at. % of B content using a single layer model at selected energy of 188.5 eV. Inset shows schematic single layer structure.

Image of FIG. 4.
FIG. 4.

Measured SXRR profiles of partially decomposed BN thin films at two selected energies (188.5 eV and 191 eV) near B K-edge along with fitted profiles with different models to quantify B at. % content and its spatial distribution in the films. (a) Optimization of B at. % content in bottom layer using trilayer model. (b) Optimization of B at. % content in middle layer. (c) Optimization of B at. % content in top layer. Schematic tri-layer structure of partially decomposed BN films for model fitting is shown in the insets.

Image of FIG. 5.
FIG. 5.

Left panel [(a)–(e)] shows measured SXRR profiles along with best-fit data of partially decomposed BN thin films at selected energies near B K-edge. The corresponding right panel shows effective SLD profile showing different layers structure. Continuous line is the effective SLD profile obtained from best fit results. Dashed, dotted, and dashed-dotted lines are for pure BN, B, and BO, respectively, for comparison. The top figure, (f), shows an illustrative the vertical depth profile of composition profile modeled for real structure. Size of balls is not scale to actual size of atom and compounds.

Image of FIG. 6.
FIG. 6.

Left panel [(a)–(d)] shows measured SXRR profiles along with best-fit data of partially decomposed BN thin films at selected energies across BO edge. The corresponding right panel show effective SLD profile showing different layer structure. Continues line is the effective SLD profile obtained from best fit results. Dashed, dotted, and dashed-dotted lines are for pure BN, B, and BO, respectively, for comparison.

Image of FIG. 7.
FIG. 7.

(a) Measured SXRR profiles along with best-fit data of partially decomposed BN thin films at selected energies near BN edge. Inset shows measured optical constants of BN. Arrows in inset show energies at which SXRR measured data are presented. (b) Effective SLD profile obtained from best fit of measured SXRR profiles (a).

Image of FIG. 8.
FIG. 8.

XPS narrow scans for B 1 s peak of partially decomposed BN thin film with different sputtering time. Insets show bar graphs of % of composition.

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/content/aip/journal/jap/114/2/10.1063/1.4812245
2013-07-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chemical selective microstructural analysis of thin film using resonant x-ray reflectivity
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4812245
10.1063/1.4812245
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