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An enhancement in the low-field electron mobility associated with a ZnMgO/ZnO heterostructure: The role of a two-dimensional electron gas
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10.1063/1.4812492
/content/aip/journal/jap/114/2/10.1063/1.4812492
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4812492

Figures

Image of FIG. 1.
FIG. 1.

(a) The dependence of the low-field electron Hall mobility on temperature associated with a ZnMgO/ZnO heterostructure. Results corresponding to the case of bulk ZnO are also depicted. These experimental results are both from Figure 1 of Makino (b) The dependence of the low-field electron Hall mobility on temperature associated with an AlGaN/GaN heterostructure. Results corresponding to the case of bulk GaN are also depicted. These experimental results are both from Figure 2 of Khan

Image of FIG. 2.
FIG. 2.

The low-field electron Hall mobility as a function of the free electron concentration for a number of free electron concentration, , to ionized impurity concentration, , ratios for the case of ZnO. These results were obtained using the model of Shur. All ZnO material parameters employed are tabulated in Table I . The temperature is set to 300 K for all cases.

Image of FIG. 3.
FIG. 3.

(a) A fit to the experimental results of Makino These experimental results of Makino correspond to the dependence of the low-field electron Hall mobility on temperature associated with a ZnMgO/ZnO heterostructure. They are depicted with the solid points. The best fit is obtained by setting the free electron concentration, , to and the ionized impurity concentration, , to . This best fit is depicted with the solid line. The individual contributions to the electron Hall mobility, corresponding to the various scattering processes considered in this analysis, are also depicted with the dashed lines. These evaluations were determined using the model of Shur , this model being cast within the framework of the relaxation-time approximation. The ZnO material parameters, used for the purposes of this analysis, are presented in Table I . (b) The contributions to the low-field electron Hall mobility associated with bulk ZnO. The free electron concentration, , is set to and the ionized impurity concentration, , is set to for the purposes of this analysis. These evaluations were determined using the model of Shur The ZnO material parameters, used for the purposes of this analysis, are presented in Table I .

Tables

Generic image for table
Table I.

The material parameters corresponding to wurtzite ZnO that we employ for the purposes of this analysis. and denote the free space dielectric constant and the free electron mass, respectively.

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/content/aip/journal/jap/114/2/10.1063/1.4812492
2013-07-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An enhancement in the low-field electron mobility associated with a ZnMgO/ZnO heterostructure: The role of a two-dimensional electron gas
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4812492
10.1063/1.4812492
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